Defects Evaluation.

Format:

Book

Author/Creator:

Koo, Sang Mo.

Language:

English

Subjects (All):

Silicon carbide.

Power electronics.

Physical Description:

1 online resource (101 pages)

Edition:

1st ed.

Place of Publication:

Zurich : Trans Tech Publications, Limited, 2026.

Summary:

Special topic volume with invited peer-reviewed papers only.

Contents:

Intro

Defects Evaluation

Preface

Table of Contents

The Elusive Bulk Inclusion, Sizing, Wafer- and Ingot-Level Localization and Their Effect on Dislocation Generation and Epitaxial Defectivity in 4H-SiC

Formation Mechanism and Reduction of Surface Pits on 4H-SiC Epitaxial Layer

Minority Charge Carrier Lifetime for Evaluating 4H-SiC Epitaxial Growth by Microwave Detected Photoconductivity Decay

DLTS Analysis of Deep Levels in 4H-SiC Schottky Barrier Diode under Different Measurement Parameters

Influence of Temperature Field and Doping on BPD Distribution in 8-Inch 4H-SiC Substrates

DC and RF Local Electrical Properties of Macrostepped 4H-SiC Surface Probed by Scanning Spreading Resistance Microscopy and Scanning Microwave Impedance Microscopy Modes

Advanced Defects Study and Monitoring in New Generation 4H-SiC Devices

Investigating the Temperature Dependence of Charge Carrier Lifetime in Low-Doped Epitaxial 4H-SiC Layers

Investigation of Micropipe Defects and Their Strain Field Distortions in SiC Substrates Using X-Ray Topography

High Quality P-Type 4H-SiC Growth by PVT Method

Characterization of Deep Levels Introduced by Energy Filtered Ion Implantation with DLTS and MCTS in 4H-SiC

Observation and Analysis of the "Galaxy" Defect in 4H-SiC through X-Ray Synchrotron Topography

Growth and Characterization of High-Quality Thick Epitaxial 4H-SiC Wafers for High Voltage Devices

Silicon Carbide Epitaxial Defects and Substrate Defects Analysis by Dynamic Photoluminescence and X-Ray Topography

Unveiling the Role of Crystallographic Defects in SiC Device Reliability with Multi Modal Structural Analysis

Keyword Index

Author Index.

Notes:

Description based on publisher supplied metadata and other sources.

Part of the metadata in this record was created by AI, based on the text of the resource.

ISBN:

9783036431253

OCLC:

1595741946