High current ESD physics and design Charvaka Duvvury, Harald Gossner, Mayank Shrivastava

Format:

Book

Author/Creator:

Duvvury, Charvaka, 1944- author.

Gossner, Harald, author.

Shrivastava, Mayank, author.

Language:

English

Subjects (All):

Semiconductors--Design and construction.

Electric discharges.

Semiconductors--Protection.

Semiconductors--Failures.

Physical Description:

1 online resource

Place of Publication:

Cambridge Cambridge University Press 2026

Summary:

"Covering a wide spectrum of semiconductor technologies, this book offers comprehensive description of the physics of electrostatic discharge (ESD) phenomena that incorporate and lead to robust on-chip protection design practices. Starting with fundamental insights into high-current ESD behavior in semiconductor devices, it gradually builds toward practical design principles and real-world reliability challenges in advanced complementary metal oxide semiconductor (CMOS), fin field effect transistor (FinFETs), gallium nitride high-electron-mobility transistors (GaN HEMTs), carbon nanostructures, and thin film transistor (TFT) technologies. Device level physics and practical design implications are explored throughout, bridging the gap between deep theoretical understanding and real-world design constraints. Including unique simulation techniques alongside experimental results, this book thoroughly explores core ESD design principles. With multiple curated case studies, this book will equip readers with the tools to address current ESD design challenges and prepare for future ones. A reliable and thought-provoking exploration, this book will be ideal for graduate students, industry professionals, and researchers working in device physics, design, and reliability"-- Provided by publisher

Contents:

Electrostatic discharge characterization methods

Process technology impact

Design of electrostatic discharge protection devices

High-current electrostatic discharge behavior

Advanced input/output electrostatic design

Ultra-large-scale integration CMOS technologies

Electrostatic discharge basics of Aluminum Gallium Nitride/Gallium Nitride high-electron mobility transistors

Basics of 1D/2D materials, thin film transistors and their electrostatic discharge failures

Challenges in novel packaging technologies

Notes:

Includes bibliographical references and index

Online resource; title from PDF title page (Cambridge Core, viewed July 24, 2026)

Other Format:

Print version High current ESD

ISBN:

9781316105375

1316105377

OCLC:

1554709589

Access Restriction:

Restricted for use by site license