Practical terahertz electronics, devices and applications. Volume 1, Solid-state devices and vacuum tubes. / Vinod Kumar Khanna.

Format:

Book

Author/Creator:

Khanna, Vinod Kumar, author.

Series:

IOP Ebooks Series

Language:

English

Subjects (All):

Solid state electronics.

Physical Description:

1 online resource (341 pages)

Edition:

First edition.

Place of Publication:

Bristol, England : IOP Publishing, [2021]

Summary:

This research and reference text provides a comprehensive and authoritative survey of the state-of-the-art in terahertz electronics research. Volume one focuses on solid-state devices and vacuum tubes. Intended for researchers and professionals in the field, the text is an essential reference for anyone working at the cutting edge of terahertz electronics.

Contents:

Intro

Preface

Acknowledgements

Author biography

Vinod Kumar Khanna

Introduction

Academic qualifications

Work experience and accomplishments

Semiconductor facility creation and maintenance

Scientific positions held

Membership of professional societies

Foreign travel

Scholarships and awards

Research publications and books

About the Book

Abbreviations and acronyms

Chemical symbols

Mathematical notation

Greek alphabet

Chapter 1 Terahertz electromagnetic waves

1.1 What are terahertz waves?

1.2 The electromagnetic waves

1.2.1 Production of electromagnetic waves

1.2.2 Oscillating charges as sources of electromagnetic waves

1.2.3 Far-field and near-field interactions

1.2.4 Wave properties of electromagnetic waves

1.2.5 Particle properties of electromagnetic waves

1.3 Subdivisions of electromagnetic waves according to frequencies: the electromagnetic spectrum

1.4 Location of terahertz gap in the international standard band designations

1.5 Terahertz electronics

1.6 The practical perspective of electronics

1.7 Moving from conventional to terahertz electronics

1.7.1 THz generation

1.7.2 THz amplification

1.7.3 THz modulation

1.7.4 THz demodulation/THz detection

1.7.5 Frequency multiplication for terahertz generation

1.7.6 Frequency mixing for shifting signal frequency from one range to another

1.8 Peculiarities of the terahertz gap

1.9 Unique advantages of terahertz gap frequencies

1.10 Organizational plan of the book

1.11 Discussion and conclusions

References

Chapter 2 Schottky barrier, metal-insulator-metal, self-switching and geometric diodes

2.1 Schottky diode principle and switching action

2.1.1 Working principle of the Schottky diode

2.1.2 Competition between Schottky barrier diode (SBD) and P-N junction diode.

2.2 Current-voltage equation of a non-ideal Schottky-barrier diode (SBD)

2.3 Components of the traditional equivalent circuit of a Schottky-barrier diode

2.3.1 Series resistance (RS) of the SBD

2.3.2 Dynamic resistance (rd) of the SBD

2.3.3 Junction capacitance (Cj) of the SBD

2.4 Cut-off frequency of the circular-contact SBD

Example 2.1

Example 2.3

2.5 Consideration of skin effect for series resistance calculation

Example 2.4

2.6 Range of applicability of traditional SBD model

2.7 Extended model of SBD

2.8 Schottky diodes with terahertz operational frequencies

2.8.1 High-frequency performance degrading factors

2.8.2 Terahertz Schottky barrier diodes

2.8.3 Schottky diodes in terahertz detection

2.8.4 Terahertz sources utilizing Schottky diode frequency-multiplier chains

2.8.5 Frequency mixing using Schottky diodes

2.9 Non-PN junction diodes

2.9.1 Metal-insulator-metal (MIM) diode

2.9.2 Self-switching diode (SSD)

2.9.3 Geometric diode

Example 2.5

Example 2.7

2.10 Discussion and conclusions

Chapter 3 Resonant tunneling diodes

3.1 Resonant tunneling diode working and high-frequency capability

3.1.1 Structure and operation of the resonant tunneling diode

3.1.2 Reason for high switching speed of resonant tunneling diode

3.2 Simplest equivalent circuit model of resonant tunneling diode

3.2.1 Oscillation frequency formula

3.2.2 Maximum oscillation frequency formula

3.3 Maximum output power conveyed to the load resistor RL

3.4 Small-signal transit-time equivalent circuit model of RTD

3.5 Physics-based small-signal equivalent circuit model

3.6 Terahertz resonant tunneling diodes

3.7 Discussion and conclusions

Chapter 4 Avalanche transit-time and transferred-electron diodes.

4.1 Mechanisms of creation of negative resistance

4.1.1 Avalanche transit time effect

4.1.2 Transferred electron effect

4.2 Frequency and power capabilities of IMPATT diode

4.3 Diode structure and dynamic negative resistance behavior

4.3.1 Diode operation as a combination of avalanche and transit time effects

4.3.2 Resonant frequency and power formulae

4.4 Terahertz GaAs IMPATT diodes

4.5 Transferred-electron diode

4.5.1 Operational frequency of Gunn diode

4.5.2 Why is a Gunn diode called a 'diode'?

4.6 Physics of Gunn diode operation

4.6.1 The Gunn effect

4.6.2 Electron transfer mechanism and negative differential resistance

4.6.3 Current oscillations arising from NDR

4.6.4 Explanation of current oscillations from the perspective of Gunn domain formation

4.7 Terahertz planar Gunn diodes

4.7.1 GaAs Gunn diodes

4.7.2 InGaAs Gunn diodes

4.8 Discussion and conclusions

Chapter 5 Heterojunction bipolar transistors

5.1 Capability of heterojunction bipolar transistor to work at high frequencies

5.1.1 Homojunction and heterojunction bipolar transistors

5.1.2 Homojunction versus heterojunction bipolar transistor

5.2 Gain definitions

5.2.1 Large-signal common-emitter current gains (βDC or hFE)

5.2.2 Small-signal common-emitter current gains (βAC or hfe)

5.2.3 Unilateral power gain (U)

5.3 Frequency response of the common-emitter transistor amplifier

5.4 Figures of merit (FOMs) for high-frequency bipolar transistors

5.4.1 Cut-off frequency (fT) of the transistor

5.4.2 Maximum frequency of oscillation (fMax) of the transistor

5.5 Correlation of terms in cut-off frequency equation with components of equivalent circuit of the bipolar transistor

5.5.1 Meaning of the first term in the denominator of fT equation.

5.5.2 Meaning of the second term in the denominator of fT equation

5.5.3 Meaning of the third term in the denominator of fT equation

5.5.4 Meaning of the fourth term in the denominator of fT equation

5.5.5 Overall meaning of the fT equation

5.6 DHBT IC technologies

5.6.1 250 nm InP DHBT IC technology

5.6.2 130 nm InP DHBT IC technology

5.7 Discussion and conclusions

Chapter 6 Metal-oxide semiconductor field-effect transistors

6.1 MOSFET construction and operation

6.2 Short-circuit current gain

6.3 MOSFET capacitances

6.3.1 Gate-to-channel capacitance

6.3.2 Gate-source and gate-drain capacitances

6.4 Cut-off frequency

6.4.1 The cut-off frequency formula

6.4.2 Physical meaning of cut-off frequency formula

6.5 Circumventing the MOSFET speed limitations due to long electron transit time

6.5.1 Resonant cavity

6.5.2 Standing waves

6.5.3 Stationary wave formation in a medium under different boundary conditions

6.5.4 Excitation of plasma waves in an FET channel

6.5.5 Determination of wavelength of plasma waves

6.5.6 Determination of velocity of plasma waves

6.5.7 Determination of frequency of plasma waves

6.6 Terahertz MOSFET detectors

6.6.1 TeraFET

6.6.2 Dual-frequency CMOS terahertz detector

6.7 Discussion and conclusions

Chapter 7 High-electron-mobility transistors

7.1 MESFET and HEMT basics

7.1.1 The MESFET

7.1.2 The HEMT

7.1.3 Superiority of HEMT over MESFET

7.2 HEMT operation at high frequencies

7.2.1 High-frequency model of HEMT

7.2.2 Minimization of delay components in HEMT

7.3 Built-in potential and capacitances

7.3.1 Built-in potential of the gate electrode/semiconductor junction of HEMT

7.3.2 Junction capacitances

7.4 Analysis of an HEMT structure

7.5 InP terahertz HEMT technology.

7.5.1 Reasons for interest in InP HEMTs

7.5.2 High-frequency HEMT amplifiers

7.5.3 HEMT terahertz emitters

7.6 Discussion and conclusions

Chapter 8 Travelling wave tubes and backward wave oscillators

8.1 General constructional features of TWTs and BWOs

8.1.1 Main components

8.1.2 Problems faced with pencil-beams

8.1.3 Performance improvement with planar sheet beams

8.1.4 Functions of electric and magnetic fields

8.1.5 Function of the slow wave structure

8.1.6 Constructional dissimilarities/similarities between TWT and BWO

8.2 Closer examination of working of TWT/BWO

8.2.1 Phase velocity (vp) and group velocity (vg) concepts

8.2.2 Phase and group velocities in a waveguide

8.2.3 Reduction of the phase velocity of electromagnetic waves by a slow wave structure

8.2.4 Floquet's theorem and electric field distribution in the slow-wave structure

8.2.5 Emission of Cherenkov radiation

Example 8.1 Interpretation of imaginary wavenumber

8.3 Difference between a travelling wave tube and backward wave oscillator from phase/group velocity viewpoint

8.4 Electron bunching and amplification of the signal in a TWT

8.5 Applications of TWTs

8.6 Terahertz TWTs

8.7 Operation of the backward wave oscillator

8.8 Advantages of the backward wave oscillator

8.9 Limitations of the backward wave oscillator

8.10 Frequency/power levels achieved with backward wave oscillators

8.11 Discussion and conclusions

Chapter 9 Gyrotrons

9.1 Difficulties faced with classical electron tubes in the terahertz range

9.2 Periodic beam devices versus periodic circuit devices

9.3 Advantages offered by gyrotron for terahertz generation

9.4 Components and constructional details of gyrotron

9.4.1 Magnetron injection gun (MIG)

9.4.2 Beam tunnel

9.4.3 The resonant cavity.

9.4.4 Electromagnetic wave output and electron beam collection system.

Notes:

Description based on publisher supplied metadata and other sources.

Description based on print version record.

Includes bibliographical references.

ISBN:

9780750344333

0750344334

OCLC:

1429743980