Chemical vapor deposition (CVD) : Methods and technologies. / edited by Levi Karlsson.

Format:

Book

Contributor:

Karlsson, Levi, editor.

Series:

Chemical Engineering Methods and Technology

Language:

English

Subjects (All):

Chemical vapor deposition.

Physical Description:

1 online resource (222 pages)

Place of Publication:

New York, New York : Nova Science Publishers, Incorporated, [2021]

Summary:

"Chemical vapor deposition (CVD) refers to a vacuum deposition method used to produce high quality, high-performance, solid materials in a variety of manufacturing industries. Chapter One provides a critical review of published experimental data for thin films of silicon nitride deposited by thermal and plasma CVD, plasma CVD, high density plasma CVD, atomic layer-by-layer deposition, and hot-wire CVD. Chapter Two describes several aspects of the use of CVD for single-crystal diamond synthesis for electronics. Chapter Three describes the properties of graphene and its preparation by a number of methods with a focus on the classical CVD method on copper foil together with graphene transfer onto a dielectric substrate"-- Provided by publisher.

Contents:

Intro

Contents

Preface

Chapter 1

CVD Technologies and Basic Properties of SiNH-Contained Thin Films for Applications in Electronic Devices

Abstract

1. Introduction

2. Thermally-Activated CVD in Flow-Type Reactors

2.1. Brief Description of Thin Film CVD Processes

2.2. Industrial Technologies for Production of S-SNTF by CVD

2.3. Directions for Improvement of the Technologies of SNTF by CVD

2.3.1. Improvement of the Existing Industrial Processes for S-SNTF in LPCVD Reactors

2.3.2. Modernization of the Processes for Obtaining Films in Flow CVD Reactors

2.3.3. New Reactants for Production of S-SNTF in Flow CVD Reactors

2.3.4. Single Substrate Flow Reactors for Production of S-SNTF by CVD

2.4. Conclusion to Section 2

3. Thermally-Activated CVD in Cycle-Type Reactors

3.1. Brief General Description of Thin Film Cycle-Type Processes

3.2. Cyclic Deposition with the Use of the Traditional Industrial Reagents

3.3. Cyclic Deposition with the Use of New Reagents

3.4. Conclusion to Section 3

4. Plasma-Actiivated Processes in Flow-Type Reactors

4.1. Brief Description of Thin Film Plasma-Activated Processes

4.2. Previous Summaries of Publications Concerning PECVD SiNH-TF

4.3. Industrial Technologies for the Production of SiNH-TF by PECVD

4.4. Directions for Improvement of the Technologies of SiNH-TF by PECVD

4.5. Conclusion to Section 4

5. Processes in Flow-Type Reactors with High Density Plasma

5.1. Brief Description of Thin Film High Density Plasma Activated Processes

5.2. HDP-CVD SNTF: Basic Results

5.3. HDP-SNTF Deposition in Experimental Reactors

5.4. Conformality and Directions of HDP-SNTF Deposition Improvement

5.5. Conclusion to Section 5

6. Plasma-Activated Processes in Cycle-Type Reactors.

6.1. Brief Description of Plasma-Activated TF Deposition in Cycle-Type Processes

6.2. Brief Review of the Basic Types of the Reactors for PE-ALD

6.3. Thin Film Deposition with the Use of the Inorganic Precursors

6.3.1. PE-ALD from Silanes

6.3.2. PE-ALD from Amines

6.3.3. PE-ALD from Chlorosilanes

6.4. Thin Film Deposition with the Use of the

Organic Precursors

6.5. Comparison of ALD Processes with the Other SNTF Deposition Processes

6.5.1. TA-ALD vs. PE-ALD Films

6.5.2. PECVD vs. PE-ALD

6.6. Conclusion to Section 6

7. Hot-Wire CVD in Flow-Type Processes

7.1. Brief Description of Hot-Wire CVD Processes

7.2. Brief Review on HW-CVD Processes and SiNH-TF Properties

7.3. Brief Review on HW-CVD SiNH-TF Reaction Mechanism

7.4. Comparison of HW-CVD and PECVD Processes for SiNH-TF

7.5. Directions for HW-CVD Processes Development

7.6. Conclusion to Section 7

8. SNTF Composition and Properties

8.1. Relationships between CVD Process Parameters and Thin Film Quality

8.2. Temperature Dependences of SNTF Deposition Rates

8.3. Temperature Dependencies of SNTF Composition

8.4. Basic Physical and Chemical Properties of SNTF

8.5. Basic Physical and Chemical Properties of SNTF

8.6. Conclusion to Section 8

Conclusion

References

Biographical Sketches

Chapter 2

Rapid-Heating Criterion in CVD Diamond Growth Technology and Possibility of Synthesizing Large Diamonds without High Pressure and Prepared Substrate

Introduction

1. General Physical Picture

2. Elementary Processes of Gas-Phase Clusters of Diamond and Graphite and Their Description Technique

2.1. Number of Surface Atoms in Diamond- and Graphite Clusters and Surface Energy of These Clusters

2.2. Model of Gibbs Free Energy Change in the Course of Nucleation and Growth of Cluster.

2.3. Comparative Surface Energies of Diamond- and Graphite Clusters

2.4. Desorption of Small Hydrocarbon Species from Surface of Diamond- and Graphene Clusters and Their Formation from Initial Gas Mixture

2.5. Oxidation of Diamond- and of Graphene Clusters

2.6. Desorption Dynamics Delay of Small Hydrocarbon Species as Compared with Temperature Growth

2.7. Estimation of Nucleation Onset Moment at Supersaturation Decay of Small Hydrocarbon Species

3. Nucleation and Growth of Diamond Clusters in Carbonate-Silicate Matrix

3.1. Simulation of How Growing Graphite- or Diamond Clusters Interact with Melt. Selection of Melt

3.2. Conditions for Saturation and Supersaturation of Melt Cells with Carbon Carrier

3.3. Diamond Cluster Nucleation Problem for Carbonate- Silicate Melt

Supplements

Competition Financial Interests

Chapter 3

Graphene Preparation by Chemical Vapour Deposition Method and Its Basic Parameters

2. Properties of GR

3. Methods of GR Preparation

4. CVD Preparation of GR

5. Transfer-Free CVD Process

6. Surface Treatment of Cu Foil Before CVD Growth of GR

7. Parameters of GR Growth by CVD on Copper

8. GR Prepared by CVD Method on Silicon Carbide

Biographical Sketch

Index

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Blank Page.

Notes:

Description based on print version record.

Includes bibliographical references and index.

ISBN:

1-5361-9990-7

OCLC:

1263028790