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The physics of solar energy conversion / Juan Bisquert.
- Format:
- Book
- Author/Creator:
- Bisquert, Juan, author.
- Language:
- English
- Subjects (All):
- Solar cells.
- Physical Description:
- 1 online resource (491 pages) : illustrations
- Edition:
- 1st ed.
- Place of Publication:
- Boca Raton, Florida ; London ; New York : CRC Press, [2020]
- Summary:
- This handbook introduces the main physico-chemical principles that govern the operation of energy devices. The work presents an explanation of the operation of photovoltaic devices with a broad perspective embracing concepts from nanostructured and highly disordered materials to highly efficient devices such as lead halide perovskite solar cells.
- Contents:
- Cover
- Half Title
- Title Page
- Copyright Page
- Dedication
- Table of Contents
- Preface
- Acknowledgments
- Author
- Chapter 1 Introduction to Energy Devices
- References
- Part I Equilibrium Concepts and Kinetics
- Chapter 2 Electrostatic and Thermodynamic Potentials of Electrons in Materials
- 2.1 Electrostatic Potential
- 2.2 Energies of Free Electrons and Holes
- 2.3 Potential Energy of the Electrons in the Semiconductor
- 2.4 The Vacuum Level
- 2.5 The Fermi Level and the Work Function
- 2.6 The Chemical Potential of Electrons
- 2.7 Potential Step of a Dipole Layer or a Double Layer
- 2.8 Origin of Surface Dipoles
- 2.9 The Volta Potential
- 2.10 Equalization of Fermi Levels of Two Electronic Conductors in Contact
- 2.11 Equilibration of Metal Junctions and the Contact Potential Difference
- 2.12 Equilibrium across the Semiconductor Junction
- General References
- Chapter 3 Voltage, Capacitors, and Batteries
- 3.1 The Voltage in the Device
- 3.2 Anode and Cathode
- 3.3 Applied Voltage and Potential Difference
- 3.4 The Capacitor
- 3.5 Measurement of the Capacitance
- 3.6 Energy Storage in the Capacitor
- 3.7 Electrochemical Systems: Structure of the Metal/Solution Interface
- 3.8 Electrode Potential and Reference Electrodes
- 3.9 Redox Potential in Electrochemical Cells
- 3.10 Electrochemical and Physical Scales of Electron Energy in Material Systems
- 3.11 Changes of Electrolyte Levels with pH
- 3.12 Principles of Electrochemical Batteries
- 3.13 Capacity and Energy Content
- 3.14 Practical Electrochemical Batteries
- 3.14.1 Zinc-Silver Battery
- 3.14.2 Sodium-Sulfur Battery
- 3.15 Li-Ion Battery
- Chapter 4 Work Functions and Injection Barriers
- 4.1 Injection to Vacuum in Thermionic Emission
- 4.2 Richardson-Dushman Equation.
- 4.3 Kelvin Probe Method
- 4.4 Photoelectron Emission Spectroscopy
- 4.5 Injection Barriers
- 4.6 Pinning of the Fermi Level and Charge-Neutrality Level
- Chapter 5 Thermal Distribution of Electrons, Holes, and Ions in Solids
- 5.1 Equilibration of the Electrochemical Potential of Electrons
- 5.2 Configurational Entropy of Weakly Interacting Particles
- 5.3 Equilibrium Occupancy of Conduction Band and Valence Band States
- 5.4 Equilibrium Fermi Level and the Carrier Number in Semiconductors
- 5.5 Transparent Conducting Oxides
- 5.6 Hot Electrons
- 5.7 Screening
- 5.8 The Rectifier at Forward and Reverse Voltage
- 5.9 Semiconductor Devices as Thermal Machines that Realize Useful Work
- 5.10 Cell Potential in the Lithium Ion Battery
- 5.11 Insertion of Ions: The Lattice Gas Model
- Chapter 6 Interfacial Kinetics and Hopping Transitions
- 6.1 Principle of Detailed Balance
- 6.2 Form of the Transition Rates
- 6.3 Kinetics of Localized States: Shockley-Read-Hall Recombination Model
- 6.4 Reorganization Effects in Charge Transfer: The Marcus Model
- 6.5 Polaron Hopping
- 6.6 Rate of Electrode Reaction: Butler-Volmer Equation
- 6.6.1 Availability of Electronic Species
- 6.6.2 Availability of Redox Species
- 6.6.3 The Kinetic Constant for Charge Transfer
- 6.7 Electron Transfer at Metal-Semiconductor Contact
- 6.8 Electron Transfer at the Semiconductor/Electrolyte Interface
- Chapter 7 The Chemical Capacitance
- 7.1 Carrier Accumulation and Energy Storage in the Chemical Capacitance
- 7.2 Localized Electronic States in Disordered Materials and Surface States
- 7.3 Chemical Capacitance of a Single State
- 7.4 Chemical Capacitance of a Broad DOS
- 7.5 Filling a DOS with Carriers: The Voltage and the Conductivity.
- 7.6 Chemical Capacitance of Li Intercalation Materials
- 7.7 Chemical Capacitance of Graphene
- Chapter 8 The Density of States in Disordered Inorganic and Organic Conductors
- 8.1 Capacitive and Reactive Current in Cyclic Voltammetry
- 8.2 Kinetic Effects in CV Response
- 8.3 The Exponential DOS in Amorphous Semiconductors
- 8.4 The Exponential DOS in Nanocrystalline Metal Oxides
- 8.5 Basic Properties of Organic Layers
- 8.6 The Gaussian DOS
- Chapter 9 Planar and Nanostructured Semiconductor Junctions
- 9.1 Structure of the Schottky Barrier at a Metal/Semiconductor Contacts
- 9.2 Changes of the Schottky Barrier by the Applied Voltage
- 9.3 Properties of the Planar Depletion Layer
- 9.4 Mott-Schottky Plots
- 9.5 Capacitance Response of Defect Levels and Surface States
- 9.6 Semiconductor Electrodes and the Flatband Potential
- 9.7 Changes of Redox Level and Band Unpinning
- 9.8 Inversion and Accumulation Layer
- 9.9 Heterojunctions
- 9.10 Effect of Voltage on Highly Doped Nanocrystalline Semiconductors
- 9.11 Homogeneous Carrier Accumulation in Low-Doped Nanocrystalline Semiconductors
- Part II Foundations of Carrier Transport
- Chapter 10 Carrier Injection and Drift Transport
- 10.1 Transport by Drift in the Electrical Field
- 10.2 Injection at Contacts
- 10.3 The Metal-Insulator-Metal Model
- 10.4 The Time-of-Flight Method
- Chapter 11 Diffusion Transport
- 11.1 Diffusion in the Random Walk Model
- 11.2 Macroscopic Diffusion Equation
- 11.3 The Diffusion Length
- 11.4 Chemical Diffusion Coefficient and the Thermodynamic Factor
- Chapter 12 Drift-Diffusion Transport
- 12.1 General Transport Equation in Terms of Electrochemical Potential.
- 12.2 The Transport Resistance
- 12.3 The Einstein Relation
- 12.4 Drift-Diffusion Equations
- 12.5 Ambipolar Diffusion Transport
- 12.6 Relaxation of Injected Charge
- 12.7 Transient Current in Insulator Layers
- 12.8 Modeling Transport Problems
- Chapter 13 Transport in Disordered Media
- 13.1 Multiple Trapping and Hopping Transport
- 13.2 Transport by Hopping in a Single Level
- 13.3 Trapping Factors in the Kinetic Constants
- 13.4 Two-Level (Single-Trap) Model
- 13.5 Multiple Trapping in Exponential DOS
- 13.6 Activated Transport in a Gaussian DOS
- 13.7 Multiple Trapping in the Time Domain
- 13.8 Hopping Conductivity
- 13.9 The Transport Energy
- 13.10 Variable Range Hopping
- Chapter 14 Thin Film Transistors
- 14.1 Organic Thin Film Transistors
- 14.2 Carrier Density in the Channel
- 14.3 Determination of the DOS in Thin Film Transistor Configuration
- 14.4 Current-Voltage Characteristics
- 14.5 The Mobility in Disordered Semiconductors
- 14.6 Electrochemical Transistor
- Chapter 15 Space-Charge-Limited Transport
- 15.1 Space-Charge-Limited Current
- 15.2 Injected Carrier Capacitance in SCLC
- 15.3 Space Charge in Double Injection
- Chapter 16 Impedance and Capacitance Spectroscopies
- 16.1 Frequency Domain Measurements
- 16.2 Dielectric Relaxation Functions
- 16.3 Resistance and Capacitance in Equivalent Circuit Models
- 16.4 Relaxation in Time Domain
- 16.5 Universal Properties of the Frequency-Dependent Conductivity
- 16.6 Electrode Polarization
- Part III Radiation, Light, and Semiconductors
- Chapter 17 Blackbody Radiation and Light
- 17.1 Photons and Light
- 17.2 Spread and Direction of Radiation
- 17.3 Color and Photometry.
- 17.4 Blackbody Radiation
- 17.5 The Planck Spectrum
- 17.6 The Energy Density of The Distribution of Photons in Blackbody Radiation
- 17.7 The Photon and Energy Fluxes in Blackbody Radiation
- 17.8 The Solar Spectrum
- Chapter 18 Light Absorption, Carrier Recombination, and Luminescence
- 18.1 Absorption of Incident Radiation
- 18.2 Luminescence and Energy Transfer
- 18.3 The Quantum Efficiency
- 18.4 The Recombination of Carriers in Semiconductors
- 18.5 Recombination Lifetime
- Chapter 19 Optical Transitions in Organic and Inorganic Semiconductors
- 19.1 Light Absorption in Inorganic Solids
- 19.2 Free Carrier Phenomena
- 19.3 Excitons
- 19.4 Quantum Dots
- 19.5 Organic Molecules and Materials
- 19.6 The CT Band in Organic Blends and Heterojunctions
- Part IV Photovoltaic Principles and Solar Energy Conversion
- Chapter 20 Fundamental Model of a Solar Cell
- 20.1 Majority Carrier Injection Mechanisms
- 20.2 Majority Carrier Devices
- 20.3 Minority Carrier Devices
- 20.4 Fundamental Properties of a Solar Cell
- 20.5 Physical Properties of Selective Contacts in Solar Cells
- Chapter 21 Recombination Current in the Semiconductor Diode
- 21.1 Dark Equilibrium of Absorption and Emission of Radiation
- 21.2 Recombination Current
- 21.3 Dark Characteristics of Diode Equation
- 21.4 Light-Emitting Diodes
- 21.5 Dye Sensitization and Molecular Diodes
- Chapter 22 Radiative Equilibrium in a Semiconductor
- 22.1 Utilization of Solar Photons
- 22.2 Fundamental Radiative Carrier Lifetime
- 22.3 Radiative Emission of a Semiconductor Layer
- 22.4 Photons at Nonzero Chemical Potential
- References.
- Chapter 23 Reciprocity Relations in Solar Cells and Fundamental Limits to the Photovoltage.
- Notes:
- Includes index.
- Description based on print version record.
- ISBN:
- 0-429-00015-4
- 1-5231-3444-5
- 0-429-50587-6
- 0-429-00014-6
- 9780429505874
- OCLC:
- 1156425099
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