Point defects in group IV semiconductors : common structural and physico-chemical aspects / written by S. Pizzini.

Format:

Book

Author/Creator:

Pizzini, S., author.

Series:

Materials Research Foundations Series

Materials Research Foundations, 2471-8904 ; Volume 10

Language:

English

Subjects (All):

Semiconductors.

Semiconductors--Congresses.

Physical Description:

1 online resource (134 pages) : illustrations.

Edition:

1st ed.

Place of Publication:

Millersville, Pennsylvania : Materials Research Forum LLC, 2017.

Summary:

Aim of this book is to focus on the properties of defects in semiconductors of the fourth group under a physico-chemical approach, capable to demonstrate whether the full acknowledgement of their chemical nature could account for several problems encountered in practice or would suggest further experimental or theoretical accomplishments.

Contents:

Intro

1. Introduction

1.1. Physical properties of group IV semiconductors

1.2 Chemistry and thermodynamics of group IV elements

1.3 Chemistry and thermodynamics of group IV carbides

2. Defects in group IV semiconductors

2.1 Introduction

2.2 Physico-chemical properties of point defects in the diamond lattice: experimental results and theoretical modelling

2.2.1 Theoretical and experimental evidences

2.2.2 Structure of point defects

2.2.3 Generation of equilibrium point defects, thermodynamics and kinetics

2.3 Experimental determination of defect properties and comparison with theoretical calculations: preliminary issues

2.3.1 Defect characterization

2.3.2 Defect properties as results of theoretical calculations

2.4 Interaction of impurities with native point defects

2.4.1 Vacancy-impurity complexes formation in silicon, germanium and silicon-germanium alloys

2.4.2. Vacancy-carbon complexes in silicon

2.4.3 Vacancy-impurity complexes in diamond: The Nitrogen-Vacancy centre

2.4.4 Vacancy-impurity complexes in diamond: other impurity-vacancy centres

2.4.5 Vacancy-impurity complexes: a new notation

3. Self-diffusion experiments and their theoretical modelling as practical tools to deduce nature and presence of native defects in group IV semiconductors

3.1 Experimental approach and outcomes

3.2 Theoretical modelling and outcomes

3.3 Foreign metal diffusion as an additional method to deduce the nature and properties of defects

4. Defects in group IV carbides

4.1. Structure and defects of carbides: generalities

4.2 Theoretical and experimental evidences

4.3 Selfdiffusion

Conclusions

Acknowledgments

References.

Notes:

Includes bibliographical references and index.

Description based on online resource; title from PDF title page (ebrary, viewed April 4, 2017).

Description based on publisher supplied metadata and other sources.

ISBN:

1-945291-23-0

OCLC:

979230357