Field-Effect Transistor Devices : Post-CMOS Theory and Applications.

Format:

Book

Author/Creator:

Dhanaselvam, P. Suveetha.

Contributor:

Guenifi, Naima.

Rahi, Shiromani Balmukund.

Ajayan, J.

Language:

English

Subjects (All):

Field-effect transistors.

Miniature electronic equipment.

Microelectronics.

Semiconductors.

Physical Description:

1 online resource (419 pages)

Edition:

1st ed.

Place of Publication:

Newark : John Wiley & Sons, Incorporated, 2026.

Summary:

Master the More-Moore paradigm and the cutting-edge material innovations redefining the limits of semiconductor miniaturization with this essential roadmap to the future of global microelectronics fabrication.In today's rapidly evolving electronics landscape, the relentless pursuit of miniaturization stands as a fundamental objective.

Contents:

Cover

Series Page

Title Page

Copyright Page

Contents

Preface

Acknowledgment

Chapter 1 Junctionless Multigate Field Effect Transistor

1.1 Introduction

1.2 From Single-Gate to Multigate FETs

1.2.1 The Era of Single-Gate FETs

1.2.2 Double-Gate Devices

1.2.2.1 Planar DG-FET

1.2.2.2 Vertical DG FET

1.2.3 Multigate Structures

1.2.3.1 Fin Field-Effect Transistor

1.2.3.2 Tri-Gate FET

1.2.3.3 GAA FETs

1.2.3.4 Surround-Gate Transistor

1.2.3.5 Omega-Gate FET

1.2.3.6 Pi-Gate FET

1.3 Junctionless Multigate FETs

1.3.1 Junctionless Transistors Design

1.3.2 Basic Principle of Junctionless Transistors

1.3.3 Evolution to Junctionless Multigate FETs

1.3.4 Advantages of Junctionless Multigate FET

1.3.5 Challenges and Limitations

1.3.6 Junctionless GAA FET Numerical Simulations

1.4 Machine Learning-Assisted Design of Junctionless GAA FET

1.5 Conclusion

References

Chapter 2 Heterojunction Field Effect Transistor

2.1 Introduction

2.2 Basic History and Challenges

2.2.1 Overview of Transistor Technology

2.3 Heterojunction-Based Field-Effect Transistors

2.3.1 Principles of Heterojunctions

2.3.2 Types of Heterojunction

2.3.2.1 Type I Heterojunction

2.3.2.2 Type II Heterojunction

2.3.2.3 Type III Heterojunction

2.4 Selection of Material for HFETs

2.4.1 Band Structure in HFETs

2.4.2 Effect of Band Gap on Device Performance

2.4.3 Formation of 2DEG Features

2.4.4 Mechanisms for 2DEG Formation

2.4.5 Implications for HFET Operation

2.5 Conclusion

Chapter 3 Nanosheet Field Effect Transistor

3.1 Introduction to Nanosheet FETs

3.2 Structural Innovations in Nanosheet FETs

3.3 Fabrication Techniques for Nanosheet FETs

3.4 Performance Advantages of Nanosheet FETs

3.5 Challenges in Nanosheet FET Development.

3.6 Applications of Nanosheet FETs

3.7 Conclusion

Chapter 4 Post CMOS Semiconductor Field Effect Transistor

4.1 Introduction

4.1.1 Overview of Semiconductor Devices

4.1.2 Historical Background

4.2 CMOS Technology

4.2.1 Historical Background

4.2.2 Principles of CMOS Technology

4.3 Advancements in Semiconductor Devices

4.3.1 Thermal Transistors

4.3.2 Advanced Materials

4.3.3 3D Integrated Circuits

4.3.4 Technological Trends

4.3.4.1 Integration of Artificial Intelligence (AI)

4.3.4.2 Internet of Things (IoT)

4.3.4.3 5G Technology

4.3.5 Manufacturing Techniques

4.3.5.1 Advanced Packaging

4.3.5.2 In-House Chip Design

4.3.5.3 Sustainable Manufacturing

4.4 Applications of Semiconductor Devices

4.4.1 Consumer Electronics

4.4.2 Digital Applications

4.4.3 Analog Applications

4.4.4 Mixed Signal Applications

4.4.5 Power Management Applications

4.4.6 Automobile Sector

4.4.7 Healthcare

4.5 Future Directions

4.5.1 Research Trends in CMOS Technology

4.5.2 Potential for New Applications

4.5.3 Environmental Impact and Sustainability

4.6 Conclusion

Chapter 5 Underlapped MOSFETs and Its Characteristics

5.1 Introduction

5.2 Structure

5.2.1 Analytical Model

5.3 Results and Discussions

5.3.1 Surface Potential

5.3.2 Electric Field

5.4 Conclusion

Chapter 6 Fundamental of Carbon Nanowires and its Applications

6.1 Introduction

6.1.1 The Nanotech Revolution: Carbon Leads the Charge

6.1.2 Carbon Nanowires: The Next Big Thing in Nano

6.2 Properties of Carbon Nanowires

6.2.1 Exceptional Thermal Conductivity

6.2.2 Steelier Than Steel: Exceptional Mechanical Strength

6.2.3 Chemical Stability of CNWs toward Fire

6.2.4 Electric Excellence: Conductivity at the Nanoscale.

6.2.5 Quantum Leap: Nanoscale Magic of CNWs

6.3 Fabrication Techniques

6.3.1 Chemical Vapor Deposition

6.3.2 Laser Precision: Ablation and CNW Formation

6.3.3 Electrochemical Approaches to CNWs

6.4 Applications of Carbon Nanowires

6.4.1 Smart Circuits: CNWs in Nanoelectronics

6.5 Ongoing Research and Future Perspectives

6.5.1 Quantum Computing, Aerospace Applications, and Photonics

6.5.2 Next-Generation Photonic Devices and Wearable Technology

6.5.3 Neuromorphic Computing and Green Energy Solutions

6.6 Case Study: Hardware Accelerators Based on CNWS

6.6.1 Carbon Nanotube Transistors and Hardware Accelerators

6.6.2 CNT-Based Hardware Accelerator Operation Mechanism

6.6.3 Advantages of CNT-Based Hardware Accelerators

6.6.4 Challenges in CNT Hardware Accelerator

6.6.5 Future Prospect

6.7 Conclusion

Chapter 7 Junctionless Transistor

7.1 Introduction

7.1.1 Key Characteristics of Junctionless FETs

7.1.2 Fundamental Principles of Junctionless FETs

7.2 Junctionless FET Structures

7.2.1 Planar Junctionless FET

7.2.2 Nanowire Junctionless FET

7.2.3 Double-Gate Junctionless FET

7.2.4 Surrounding Gate (Cylindrical) JLFET

7.2.5 Double-Material Gate JLFET

7.2.6 Triple-Gate and Gate-All-Around JLFET

7.3 Modeling of Junctionless Fet

7.3.1 Analytical Modeling

7.3.2 Charge Model

7.3.3 Drain Current Model

7.3.4 Linear Region Drain Current

7.3.5 Drain Current in Saturation Region

7.3.6 Characteristics of Junctionless FET

7.4 Challenges and Design Considerations in JLFET Fabrication

7.4.1 Doping Control and Uniformity

7.4.2 Gate Control and Electrostatic Integrity

7.4.3 Material Selection for Gate and Channel

7.4.4 Oxide Quality and Thickness Control

7.4.5 Process Integration with CMOS Technology

References.

Chapter 8 Field-Effect Transistor-Based Biosensors in Medical Field: Principles and Material Innovations

8.1 Introduction

8.2 Working Principle of Bio-FET

8.3 Distinct VOCs Related to Diseases and Its Human Body Origins

8.4 Nanomaterials Used for Sensing VOCs

8.5 Conclusion

Chapter 9 Wearable Device Analysis and Applications

9.1 Introduction

9.2 Methodology

9.3 Simulation Result

9.4 Conclusion

Chapter 10 Perovskites: Pioneering the Next Generation of Semiconductor Technologies

10.1 Introduction

10.2 The Science of Perovskites

10.2.1 Crystal Structure and Composition

10.2.2 Electronic and Optical Properties

10.2.3 Stability and Defect Tolerance

10.2.4 Defect Tolerance

10.3 Advantages of Perovskites over Traditional Semiconductors

10.4 Applications of Perovskites in Semiconductor Technologies

10.5 Conclusion

Chapter 11 Performance Analysis of Eco-Friendly Perovskite Solar Cells

11.1 Introduction

11.2 Materials and Methodology

11.3 Performance Analysis

11.4 Conclusion

Chapter 12 Real Time Myocardial Infarction Detection and Localization Using an Advanced VLSI System

12.1 Introduction

12.1.1 Importance of Early Myocardial Infarction Detection

12.1.2 Motivation for VLSI-Based Solution

12.1.3 Role of Electrocardiograms (ECGS) in Cardio Vascular Diagnostics

12.2 Background and Literature Review

12.2.1 Myocardial Infarction: Causes, Symptoms and Consequences

12.2.2 Diagnostic Approaches for Myocardial Infarction

12.2.3 VLSI in Medical Application

12.3 Proposed VLSI Architecture

12.3.1 Design Objectives

12.3.2 System Overview

12.3.3 Classification Methodology

12.3.4 Implementation Overview

12.4 Performance Analysis

12.4.1 Evaluation Metrics

12.4.2 Experimental Results.

12.4.3 Comparison with Existing Systems

12.5 Applications and Practical Deployment

12.5.1 Integration into Medical Devices

12.5.2 Impact on Patient Outcomes

12.5.3 Future Directions

12.6 Conclusion

Chapter 13 Tunnel Field Effect Transistors and its Application as Label-Free Biosensor

13.1 Introduction

13.1.1 New Approaches for Upcoming Technology Generations

13.1.2 Tunnel Field-Effect Transistors (Tunnel FETs): A Vital Technique toward Power Harvesting

13.2 Tunnel FET Technology: State of Art

13.3 Band-to-Band Tunneling (BTBT) Current

13.3.1 Reported Work

13.4 Device Architecture and Simulation Deck

13.5 Results and Discussion

13.6 Conclusion

Bibliography

Chapter 14 Graphene Nanosheet Field Effect Transistor

14.1 Introduction

14.2 Device Structures and Simulations

14.3 Analytical Modeling

14.3.1 Boundary Conditions

14.3.2 Channel Potential Model

14.3.3 Electric Field Model

14.3.4 Model of Threshold Voltage

14.3.5 Drain Current Model

14.3.6 Transconductance

14.3.7 Integrated Noise

14.4 Result and Discussion

14.5 Conclusion

Chapter 15 Design and Performance Analysis of 10 T and 28 T Full Adder Using MOSFET and FinFET

15.1 Introduction

15.2 Materials and Methods

15.2.1 28 T CMOS Full Adder

15.2.2 10 T GDI CMOS Full Adder

15.2.3 28 T FinFET Full Adder

15.2.4 10 T GDI FinFET Full Adder

15.2.5 Simulation Methodology

15.3 Results and Discussion

15.4 Conclusions

Chapter 16 Investigations of Vital Design Parameters of a Low-Power Amplifying Unit for EEG and Advanced Neuroscience Research

16.1 Introduction

16.2 Methodology

16.3 Circuit Design and Description

16.4 Design Specifications

16.5 Simulation and Results

16.6 Output Waveforms

16.7 Conclusion

Chapter 17 Heterojunction Tunnel FET with Graphene Nanoribbon.

Notes:

Description based on publisher supplied metadata and other sources.

ISBN:

9781394311477

OCLC:

1592704610