GaN and ZnO-based materials and devices / Stephen Pearton, editor.

Format:

Book

Contributor:

Pearton, Stephen.

Series:

Springer series in materials science.

Springer series in materials science, 0933-033X

Language:

English

Subjects (All):

Gallium nitride.

Zinc oxide thin films.

Physical Description:

1 online resource (496 p.)

Edition:

1st ed. 2012.

Place of Publication:

Heidelberg : Springer, 2012.

Language Note:

English

Summary:

The AlInGaN and ZnO materials systems have proven to be one of the scientifically and technologically important areas of development over the past 15 years, with applications in UV/visible optoelectronics and in high-power/high-frequency microwave devices. The pace of advances in these areas has been remarkable and the wide band gap community relies on books like the one we are proposing to provide a review and summary of recent progress.

Contents:

UV LEDs

Non-Polar GaN Growth

High-Quality AlGaN Alloys

Bulk AlN for UV LEDs

Enhancement of the Light-Extraction Efficiency of GaN-Based Light Emitting Diodes

GaN-Based Sensors

III-N Alloys for Solar Power Conversion

GaN HEMT Technology

GaN Power Devices

Nitride Nanostructures

Radiation-Induced Defects in GaN

Electron Injection Effects in GaN

Progress and Prospect of Rare-Earth Nitrides

Advances in PLD of ZnO and Related Compounds

ZnO Nanowires and p-Type Doping

Multifunctional ZnO Structures

ZnO/MgZnO Quantum Wells

GZO TFTs.

Notes:

"With 328 figures."

Includes bibliographical references and index.

ISBN:

9786613577771

9781280399855

1280399856

9783642235214

3642235212

OCLC:

779200552