Microelectronics : Simulations, Modeling and Applications.

Format:

Book

Author/Creator:

Raj, Balwinder.

Language:

English

Subjects (All):

Semiconductors.

Artificial intelligence.

Physical Description:

1 online resource (561 pages)

Edition:

1st ed.

Place of Publication:

Newark : John Wiley & Sons, Incorporated, 2026.

Summary:

Unlock the future of nanotechnology with this essential guide, which provides an exhaustive exploration of solutions to overcome the physical limits of silicon and optimize the performance of next-generation nanoscale semiconductor devices.

Contents:

Cover

Series Page

Title Page

Copyright Page

Contents

Preface

Acknowledgment

Chapter 1 2D Materials for Microelectronic Devices

1.1 Introduction

1.2 Fundamental Properties of 2D Materials

1.2.1 Graphene

1.2.2 Hexagonal Boron Nitride (h-BN)

1.2.3 Transition Metal Dichalcogenides (TMDs)

1.2.4 Borophene

1.2.5 Phosphorene

1.2.6 Silicene

1.2.7 Germanene

1.2.8 MXenes

1.3 Synthesis and Fabrication Techniques

1.3.1 Mechanical Exfoliation

1.3.2 Chemical Vapor Deposition

1.3.3 Liquid Phase Exfoliation

1.3.4 Molecular Beam Epitaxy

1.3.5 Fabrication Techniques

1.4 Microelectronic Devices Based on 2D Materials

1.4.1 Transistors

1.4.2 Memory Devices

1.4.3 Sensors

1.4.4 Optoelectronic Devices

1.5 Conclusion and Future Prospects

References

Chapter 2 Microelectronic Devices

2.1 Introduction

2.2 Microelectronic Devices for Gas Sensor

2.3 Microelectronic Devices for Biosensor

2.4 MEMS-Based Sensors

2.5 Microelectronic Packaging

2.6 Various Microelectronic Devices for Distinct Uses

2.7 Summary

Chapter 3 Insights Review of Microelectronic Devices

3.1 Simulations of Microelectronic Devices

3.2 FinFET

3.3 Tunnel FET

3.4 Nanowire-FET

3.5 Nanosheet FET

3.6 FeFET

3.7 NCFET

3.8 Planar and Vertical Nano-FET Structures

Chapter 4 Novel Devices with Carbon and Graphene

4.1 Introduction

4.1.1 Overview of Carbon and Graphene

4.1.2 Carbon-Based Materials

4.1.3 Importance of Graphene in Modern Technology

4.2 Graphene and Carbon's Properties

4.2.1 Structural Characteristics

4.2.2 Electrical and Thermal Conductivity

4.2.3 Mechanical Strength

4.2.4 Optical Properties

4.3 Carbon and Graphene Synthesis

4.3.1 Chemical Vapor Deposition

4.3.2 Mechanical Exfoliation.

4.3.3 Reduction of Graphene Oxide

4.3.4 Exfoliation in Liquid Phase

4.3.5 Silicon Carbide (SiC) Epitaxial Growth

4.3.6 Plasma-Enhanced Chemical Vapor Deposition

4.4 Carbon-Based Devices

4.4.1 Carbon Nanotubes in Electronics

4.4.2 Carbon-Based Transistors and FETs

4.4.3 Energy Storage Devices (Batteries, Supercapacitors)

4.4.4 Carbon Sensors and Actuators

4.5 Graphene-Based Devices

4.5.1 Graphene Transistors and FETs

4.5.2 Graphene for Energy Harvesting and Storage

4.5.3 Graphene Photodetectors and Optoelectronics

4.5.4 Graphene-Based Flexible Electronics

4.6 Comparative Study of Carbon Nanotube and Graphene-Based Devices

4.7 Applications of Carbon and Graphene in Novel Devices

4.7.1 Wearable Electronics

4.7.2 Biomedical Applications

4.7.3 Environmental Sensors and Water Purification

4.7.4 Energy Harvesting and Solar Cells

4.7.5 Quantum Computing and Advanced Memory Devices

4.8 Challenges and Future Directions

4.8.1 Production Scalability and Cost

4.8.2 Integration with Current Technology

4.8.3 Environmental and Safety Concerns

4.8.4 Future of Carbon and Graphene in Electronics

4.9 Conclusion

4.9.1 Summary of Key Points

4.9.2 Potential of Carbon and Graphene in Future Technologies

Chapter 5 Carbon and Graphene Devices with Applications

5.1 Introduction

5.2 Carbon: Advantages and Properties

5.2.1 Advantages of Carbon

5.2.2 Properties of Carbon

5.3 Graphene: Advantages and Properties

5.3.1 Advantages of Graphene

5.3.2 Properties of Graphene

5.4 Novel Device Structures Based on Carbon

5.4.1 Carbon Nanotube FETs (CNTFETs)

5.4.2 Carbon-Based Sensors

5.4.3 Carbon-Based Solar Cells

5.4.4 Carbon-Based Energy Storage Devices

5.4.5 Carbon-Based Memristors

5.5 Novel Device Structures Based on Graphene.

5.5.1 Graphene Transistors

5.5.2 Graphene-Based Sensors

5.5.3 Graphene-Based Memory Devices

5.5.4 Graphene-Based Solar Cells

5.5.5 Graphene-Based Quantum Devices

5.6 Fabrication and Integration Challenges

5.7 Future Outlook

5.8 Conclusion

5.9 Summary

Chapter 6 III-V Compound Semiconductor Devices

6.1 Introduction

6.2 Properties of III-V Compound Semiconductors

6.3 Fabrication Processes

6.4 Applications of III-V Compound Semiconductors

6.5 Optoelectronic Devices

6.6 Challenges and Future Prospects

6.7 Conclusion

Chapter 7 Dopingless Heterojunction Tunnel FET and its Application

7.1 Introduction

7.1.1 New Approaches for Upcoming Technology Generations

7.2 Tunnel FET Technology: State of the Art

7.2.1 Band-to-Band Tunneling Current

7.3 Device Design and Simulation Methodologies

7.4 Results and Discussions

7.5 Conclusion

Chapter 8 Silicon Nanowire Field Effect Transistor and Its Applications

8.1 Introduction

8.2 Multi-Gate Device

8.3 Advanced GAAFET Technology

8.4 Triple-Gate Optimization Junctionless Cylindrical SiNWFET-Based Uricase and ChOx Biosensor Device

8.5 Results and Discussion of Advanced Triple SiNW GAAFET Device

8.6 Conclusion

Chapter 9 Impact of Material and Structural Engineering in Double-Gate Junction Underlap Dual-Gate FinFETs

9.1 Background

9.2 Structure and Simulation of a 2D FinFET

9.3 Setup of the Simulation

9.4 Submicron Effects

9.5 Impact of Different Oxide Materials

9.6 Structural Engineering

9.7 Applications of Double-Gate FinFETs Based on Design Variations

9.8 Summary

Chapter 10 Nanoelectronic System Design for RF Energy Harvesting

10.1 Introduction

10.2 RF Energy Harvesting: Basic Design Perspectives.

10.3 Design of Microelectronic Systems for RF Energy Harvesting

10.3.1 Rectifier Design Perspectives

10.3.2 Power Management Unit: Aspects of Design

10.4 Nanoelectronic Systems for RFEH

10.4.1 Nanomaterials for RFEH: Design of Devices and Detectors

10.4.2 Nano-EH: The Future of RF Energy Harvesting

10.5 Conclusion

Chapter 11 Fin Field-Effect Transistor-Based Digital Logic Circuits Using 7-nm Regime

11.1 Introduction

11.1.1 Fin-FET Device: Scaling

11.2 Literature Overview

11.3 Fin-FET-Based Digital Circuits

11.4 Conclusion

11.5 Summary of Chapter

Chapter 12 MEMS Sensors and Its Applications

12.1 Introduction and Scope

12.2 MEMS Sensor Development and Fabrication Process

12.3 Applications

12.4 Market Analysis and Key Players

12.5 MEMS Sensor's Working Principle

12.6 MEMS Sensors-Principle, Structural Design, and Applications

12.7 Packaging Challenges in MEMS Sensors

12.8 Future Scope

12.9 Summary

Acknowledgments

Chapter 13 Investigation of MEMS Sensors and Applications

13.1 Introduction

13.2 Classification of MEMS Sensors

13.3 MEMS Thermoelectric Infrared Sensors

13.4 MEMS Humidity Sensor

13.5 MEMS Electrochemical Vibration Sensor

13.6 MEMS Pressure Sensors

13.7 MEMS Sun Sensor

13.8 MEMS Technology for Sensing High-Voltage DC Artificial Electric Fields in Air

13.9 A Sensor for Hematology Analyzer Using MEMS Technology

13.10 Microelectromechanical System Gas Sensor Utilizing Carbon Nanotubes for Ionization

13.11 Uniform Mass Sensitivity in MEMS Vibrational Mass Sensors

13.12 Temperature Sensor Using MEMS-Based Platinum Film on an Alumina Substrate

13.13 Conclusion

Chapter 14 Piezoelectric MEMS Sensors and its Applications

14.1 Introduction.

14.2 Fundamentals of Piezoelectric MEMS Sensors

14.3 Development of Piezoelectric Materials

14.4 Sensing Performance Criteria

14.5 Applications of Piezoelectric MEMS Gas Sensors

14.6 Challenges

14.7 Conclusion and Future Perspectives

Chapter 15 Design Exploration of PVT-Tolerant Pre-Amplifiers for Seizure Monitoring

15.1 Introduction

15.2 Methodology

15.3 Design Implementation Technique

15.4 Simulation Results

15.5 Conclusion

Chapter 16 Advanced Electroencephalography and Its Influence on Neuroscience Applications

16.1 Introduction

16.2 Comprehending Neurological Activities

16.3 Methodology

16.4 Circuit Diagram and Description

16.5 Design Specifications

16.6 Simulation and Results

16.7 Output Waveforms

16.8 Conclusion

Chapter 17 Bridging Memory and Computation: Reimagining Digital Logics through Memristor Technology

17.1 Introduction

17.2 IMPLY and FALSE

17.3 MAGIC

17.4 Ternary Logic

17.5 Decision Tree

17.6 Conclusion

Chapter 18 Nanowire Synapse for Accelerating Neuromorphic Computing

18.1 Introduction

18.1.1 Neuromorphic Computing

18.1.2 Nanowire-FETs

18.2 Literature Review

18.3 Methodology

18.4 Challenges and Opportunities

18.5 Result and Discussion

18.6 Conclusion

About the Editors

Index

Also of Interest

EULA.

Notes:

Description based on publisher supplied metadata and other sources.

Part of the metadata in this record was created by AI, based on the text of the resource.

ISBN:

1-394-33648-9

1-394-33647-0

9781394336470

OCLC:

1572094561