Electrical Adjustment for Intelligent Sensor IC Engineering Dept., Nippondenso Company, Limited

Format:

Conference/Event

Author/Creator:

Iida, Makio, author.

Conference Name:

International Congress & Exposition (1990-02-26 : Detroit, Michigan, United States)

Language:

English

Physical Description:

1 online resource

Place of Publication:

Warrendale, PA SAE International 1990

Summary:

1. AbstractWe have developed Polycrystalline Silicon Digital Trimming (PDT). This method is a type of electrical adjustment for intelligent sensors. PDT uses the resistance decrease of doped polycrystalline silicon resistors due to excess current conduction. The circuit consists of doped polycrystalline silicon resistors, write transistors, comparators and R - 2R resistors. This method needs only a modification of the dopant in the polycrystalline silicon of the CMOS fabrication process which is easily integrated with the intelligent sensor

Notes:

Vendor supplied data

Publisher Number:

900491

Access Restriction:

Restricted for use by site license