Semiconductor Device Simulation of Solid State Relay Power MOSFETs Nippondenso Company, Limited

Format:

Conference/Event

Author/Creator:

Ito, Toyoki, author.

Conference Name:

SAE International Congress & Exposition (1988-02-29 : Detroit, Michigan, United States)

Language:

English

Physical Description:

1 online resource

Place of Publication:

Warrendale, PA SAE International 1988

Summary:

This paper describes the development of the two-dimensional semiconductor device simulator called DS2* and its application in automotive power MOSFET design. DS2 clarifies carrier motions in MOSFETs under various operating conditions and calculates the current characteristics in intense electric fields in order to evaluate the device breakdown.Simulation results with p channel power MOSFETs for automotive application indicate that on resistance is significantly dependent on device miniaturization and that device breakdown is caused by one of three mechanisms which are, avalanche from the surface layer, reach through arid punch through

Notes:

Vendor supplied data

Publisher Number:

880410

Access Restriction:

Restricted for use by site license