1 option
Self-Thermal Protecting Power MOSFETs R&D IC Dept. Nippondenso Company, Limited
- Format:
- Conference/Event
- Author/Creator:
- Yamaoka, Masami, author.
- Conference Name:
- SAE International Congress & Exposition (1988-02-29 : Detroit, Michigan, United States)
- Language:
- English
- Physical Description:
- 1 online resource
- Place of Publication:
- Warrendale, PA SAE International 1988
- Summary:
- A power MOSFET which cuts off current surges itself at critical high temperatures and never breaks or fails thermally has been developed. The thermal sensors consist of PN junction diodes built into the polysilicon layers on the oxides of conventional DMOSFETs
- Notes:
- Vendor supplied data
- Publisher Number:
- 880411
- Access Restriction:
- Restricted for use by site license
The Penn Libraries is committed to describing library materials using current, accurate, and responsible language. If you discover outdated or inaccurate language, please fill out this feedback form to report it and suggest alternative language.