Silicon Semiconductor Pressure Sensor for High Pressure Use Research and Development Dept. 1 Nippondenso Company, Limited

Format:

Conference/Event

Author/Creator:

Mizukoshi, Masahito, author.

Conference Name:

SAE International Congress & Exposition (1988-02-29 : Detroit, Michigan, United States)

Language:

English

Physical Description:

1 online resource

Place of Publication:

Warrendale, PA SAE International 1988

Summary:

This paper will introduce a new type of high pressure sensor. In this kind of sensor, an active surface silicon sensing chip is utilized on which strain gages are fabricated, the active surface is mounted on and bonded to a glass die by anodic bonding. Pressure is applied to the opposite side of the active surface. With this type of sensor we were able to exclude a seal diaphragm and the costly oil filled process which are commonly used in high pressure sensors. We were able to achieve a pressure measurement up to 200 kgf/cm2 within an error of 0.6% non linearity. This paper describes the optimum design and characteristics of this pressure sensor

Notes:

Vendor supplied data

Publisher Number:

880412

Access Restriction:

Restricted for use by site license