High Contrast Thin Film Electroluminescent Deyice with a GaAs Absorption Layer Nippon Seiki Company, Limited Nagaoka, Japan

Format:

Conference/Event

Author/Creator:

Yokoyama, Meiso, author.

Conference Name:

SAE International Congress & Exposition (1986-02-24 : Detroit, Michigan, United States)

Language:

English

Physical Description:

1 online resource

Place of Publication:

Warrendale, PA SAE International 1986

Summary:

An ITO/BaTi03 /ZnS:Mn/black insulator/Al ac thin film electroluminescent display device with high display viewability has been developed for the application in the automotive dashboard display.The device consists of back and front insulating layers and a ZnS:Mn luminescent layer. The back insulating layer consists of the GaAs light absorption layer and the Hf O2 insulating layer. This device exhibits high contrast ratio (greater than 2:1) in an ambient illumination of 10,000 ft-candle at 125 ft-L brightness.This high contrast device also shows low power consumption due to placement of the black GaAs absorption layer between Hf O2 insulating layers in the back side. This is a significant improvement over previously published results. Detailed experimental results will be presented

Notes:

Vendor supplied data

Publisher Number:

860349

Access Restriction:

Restricted for use by site license