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Gallium Arsenide Solar Cell Vapor Phase (MOCVD) Technology Applied Solar Energy Corporation

SAE Technical Papers (1906-current) Available online

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Format:
Conference/Event
Author/Creator:
Yeh, Y. C. M., author.
Conference Name:
Aerospace Congress & Exposition (1984-10-15 : Long Beach, California, United States)
Language:
English
Physical Description:
1 online resource
Place of Publication:
Warrendale, PA SAE International 1984
Summary:
This paper describes progress made in adapting a chemical vapor deposition (CVD) method, using mostly organo-metallic (OM) sources, to deposit layers of gallium arsenide to form an efficient solar cell. The requirements of the layer deposition are discussed, as are the necessary cell process steps required to form a qualified space-use solar cell. The results obtained to date are summarized, along with some consideration
Notes:
Vendor supplied data
Publisher Number:
841442
Access Restriction:
Restricted for use by site license

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