Thin Film Semiconductor NOx Sensor

Format:

Conference/Event

Author/Creator:

Chang, Shih-Chia, author.

Conference Name:

1980 Automotive Engineering Congress and Exposition (1980-02-25 : Detroit, Michigan, United States)

Language:

English

Physical Description:

1 online resource

Place of Publication:

Warrendale, PA SAE International 1980

Summary:

In direct contact with untreated, undiluted exhaust gases, the resistance of the thin film semiconductor tin oxide NOx sensor (TFS sensor) shows strong dependence on engine air-to-fuel ratio (A/F). The peak resistance of the sensor occurs around 1718 A/F. From frequency response tests, the sensor response time constant is estimated to be ~1.1 seconds. A chemiluminiscent NOx analyzer (CLA) is used to measure the NO and NOx concentrations in the exhaust gases, while the NO2 content is estimated from [NOx] - [NO] measurements. Peak concentrations of NO and NO2 occur at 15 A/F and 1718 A/F, respectively. The NO2 peak position is very close to the sensor resistance peak position. While EGR drastically reduces the NO content, it shows a smaller effect on the sensor resistance, especially around the stoichiometric condition

Notes:

Vendor supplied data

Publisher Number:

800537

Access Restriction:

Restricted for use by site license