Totally Integrated Pressure Transducer Solid State Electronics Center Honeywell, Incorporated

Format:

Conference/Event

Author/Creator:

Bicking, R. E., author.

Conference Name:

SAE International Congress & Exposition (1981-02-23 : Detroit, Michigan, United States)

Language:

English

Physical Description:

1 online resource

Place of Publication:

Warrendale, PA SAE International 1981

Summary:

Until now, environmental and cost concerns have inhibited widespread application of piezoresistive pressure transducers in many applications. The monolithic silicon pressure sensor, unlike a conventional I C, must interface with the environment.The circuit side of the sensor chip is protected from the environment in the integrated pressure transducer (IPT).The entire circuit, including high level amplification and temperature compensation, is placed on a chip only 0.1 square. It has built-in trim capability via thin film resistors and is contained in a package de signed for low cost processing

Notes:

Vendor supplied data

Publisher Number:

810376

Access Restriction:

Restricted for use by site license