Development of Fabrication Technology for MOS-Based Power Switching Devices in SiC

Format:

Conference/Event

Author/Creator:

Cooper, James A., author.

Conference Name:

SAE Aerospace Power Systems Conference (1997-04-09 : Williamsburg, Virginia, United States)

Language:

English

Physical Description:

1 online resource

Place of Publication:

Warrendale, PA SAE International 1997

Summary:

Power switching devices in the wide bandgap semiconductor silicon carbide (SiC) are under development in many laboratories in the United States, Europe, and Japan. Because SiC can be thermally oxidized to form SiO2, it is possible to construct MOS-based power devices such as power MOSFETs, IGBTs, and MCTs in this material. This paper outlines the technical challenges which must be overcome before MOS-based power switching devices in SiC can reach the commercial marketplace

Notes:

Vendor supplied data

Publisher Number:

971236

Access Restriction:

Restricted for use by site license