SOI Type Pressure Sensor for High Temperature Pressure Measurement Mitsubishi Electric Corporation

Format:

Conference/Event

Author/Creator:

Hase, Yuji, author.

Conference Name:

International Congress & Exposition (1994-02-28 : Detroit, Michigan, United States)

Language:

English

Physical Description:

1 online resource

Place of Publication:

Warrendale, PA SAE International 1994

Summary:

An SOI type pressure sensor has been developed which can measure pressure at high temperature environments above 150°C.SOI stands for Silicon On Insulator. A single-crystalline silicon layer is located on an insulating layer formed on a silicon substrate. The piezoresistors of the SOI type pressure sensor are made from the single-crystalline silicon layer which is isolated from the silicon substrate by the insulating layer. There is no leakage current from the piezoresistors. The SOI structure is made by the laser-recrystallization-method.The properties of the SOI type pressure senor are as good as conventional semiconductor pressure sensors

Notes:

Vendor supplied data

Publisher Number:

940634

Access Restriction:

Restricted for use by site license