SiC Devices for Space Electronics: Phase I - High Voltage, Temperature Hard Contacts University of Cincinnati

Format:

Conference/Event

Author/Creator:

Su, J. N., author.

Conference Name:

Aerospace Atlantic Conference & Exposition (1994-04-19 : Dayton, Ohio, United States)

Language:

English

Physical Description:

1 online resource

Place of Publication:

Warrendale, PA SAE International 1994

Summary:

High voltage Schottky diodes have been fabricated on 3C-SiC films grown on Si substrates. A Ni metallization process has been developed to fabricate both rectifying and ohmic contacts to SiC by controlling the post-annealing temperature. A high voltage (>150V) breakdown has been obtained at room temperature from the SiC Schottky diode. The Ni-SiC Schottky junction shows a thermal resistance for temperatures as high as 600°C. This technology has good potential for monolithic integration of SiC high power devices and Si integrated circuits

Notes:

Vendor supplied data

Publisher Number:

941227

Access Restriction:

Restricted for use by site license