Improved Electrical Properties of n-Type SiGe Alloys Thermo Electron Technologies Corporation

Format:

Conference/Event

Author/Creator:

Scoville, A. N., author.

Conference Name:

27th Intersociety Energy Conversion Engineering Conference (1992) (1992-08-03 : San Diego, California, United States)

Language:

English

Physical Description:

1 online resource

Place of Publication:

Warrendale, PA SAE International 1992

Summary:

The effect of changes in the carrier concentration and mobility for heavily doped n-type SiGe on the electrical power factor has been investigated. It has been shown that power factors of 37-40 μV/cm-K2 can be achieved with carrier concentrations of 2.0 - 2.5 1020 cm-3 and mobilities of 38-40 cm2/V-sec. Many samples with suitable carrier concentration do not have high mobilities and some rationale for this behavior is presented.Initial results are presented on fabrication of n-type samples from ultra-fine powders. The emphasis in this work is to achieve thermal conductivity reductions by adding inert particles to scatter mid-frequency phonons

Notes:

Vendor supplied data

Publisher Number:

929419

Access Restriction:

Restricted for use by site license