Phase Diagram and Electrical Behavior of Silicon-Rich Iridium Silicide Compounds Jet Propulsion Lab

Format:

Conference/Event

Author/Creator:

Allevato, C. E., author.

Conference Name:

27th Intersociety Energy Conversion Engineering Conference (1992) (1992-08-03 : San Diego, California, United States)

Language:

English

Physical Description:

1 online resource

Place of Publication:

Warrendale, PA SAE International 1992

Summary:

The iridium-silicon phase diagram on the silicon-rich side was investigated by means of X-ray powder diffraction, density, differential thermal analysis, metalography, microprobe analysis, and electrical resistivity. Attempts were made to prepare eight previously reported silicon-rich iridium silicide compounds by arc melting and Bridgman-like growth. However, microprobe analysis identified only four distinct compositions: IrSi, Ir3Si4, Ir3Si5 and IrSi3. The existence of Ir4Si5 could not be confirmed in this study, even though the crystal structure has been previously reported. Differential thermal analysis (DTA) in conjunction with X-ray powder diffraction confirm polymorphism in IrSi3, determined to have orthorhombic and monoclinic unit cells in the high and low temperature forms. A eutectic composition alloy of 83±1 atomic % silicon was observed between IrSi3 and silicon. Ir3Si4 exhibits distinct metallic behavior while Ir3Si5 is semiconducting. Both and IrSi and IrSi3 exhibit nearly temperature independent electrical resistivities on the order of 5-10 10-6 Ω-m

Notes:

Vendor supplied data

Publisher Number:

929423

Access Restriction:

Restricted for use by site license