Shielded Gate Trench Technology for Achieving the Best Performing Automotive MOSFETs in Medium Voltage Applications ON Semiconductor

Format:

Conference/Event

Author/Creator:

Hossain, Hossain, author.

Contributor:

Deng, Shengling

Grimaldi, Mo

Linehan, Emily

Loechelt, Gary

Ṣāliḥ, ʻAlī

Sellers, Jim

Wan, Irene

Young, Alexander

Conference Name:

WCX 17: SAE World Congress Experience (2017-04-04 : Detroit, Michigan, United States)

Language:

English

Physical Description:

1 online resource

Place of Publication:

Warrendale, PA SAE International 2017

Summary:

AbstractTo meet the increasing demand for lower RDS(ON) MOSFETs in medium voltage automotive applications, the shielded gate trench MOSFET architecture is becoming increasingly popular in recent years for its ability to achieve both lower RDS(ON) and faster switching speed. The lower specific drain-to-source resistance (RDS(ON).Area) translates into smaller chip size and consequently cheaper die cost for the end customers. Furthermore, shielded gate trench architecture offers smaller gate-to-drain capacitance by utilizing the shielding effect from the shield-poly, leading to lower G-D charge (QGD), faster switching speed, and increased dv/dt immunity. A comprehensive portfolio of medium voltage shielded gate power MOSFET products in several voltage classes (40V, 60V, 80V, and 100V) in automotive and industrial markets is presented in this paper. The latest generation shielded gate technologies have the industry leading performance with superior efficiency, better Figure-of-Merits (FOMs), and improved circuit performance, compared to the prior generations and the leading competitors in the market

Notes:

Vendor supplied data

Publisher Number:

2017-01-0012

Access Restriction:

Restricted for use by site license