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Automotive MOSFETs Operating in the Safe Operating Area Infineon Technologies AG
- Format:
- Conference/Event
- Author/Creator:
- Puerschel, Puerschel, author.
- Conference Name:
- SAE 2015 World Congress & Exhibition (2015-04-21 : Detroit, Michigan, United States)
- Language:
- English
- Physical Description:
- 1 online resource
- Place of Publication:
- Warrendale, PA SAE International 2015
- Summary:
- AbstractThe modern day power MOSFET is constructed using the latest technology in order to minimize the drain source resistance. The latest MOSFET technologies are capable of achieving the same drain to source resistance with a smaller MOSFET die than previous generations which will directly lead to increased thermal resistance and limited energy handling capability. This paper will discuss the Safe Operating Area of power MOSFETs and how to assess new MOSFET technology
- Notes:
- Vendor supplied data
- Publisher Number:
- 2015-01-0263
- Access Restriction:
- Restricted for use by site license
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