The Importance of Analysis of Electrical Parameters for Design of Analog Circuits in Automotive Modules General Motors

Format:

Conference/Event

Author/Creator:

Navarenho de Souza, Navarenho de Souza, author.

Conference Name:

21st SAE Brasil International Congress and Exhibition (2012-10-02 : Sao Paulo, Brazil)

Language:

English

Physical Description:

1 online resource

Place of Publication:

Warrendale, PA SAE International 2012

Summary:

The intention of this paper is to discuss the importance ofanalysis of some electrical parameters in order to design analogcircuits in electronic modules, including automotive ones. Today,the challenge is to have devices which consume less power, highperformance and higher integration density, so that it explains whysuch analysis is crucial to achieve better performances and meetthe desired results. To understand how this analysis of electricalparameters are important and show how the devices can have betterperformance, this paper brings an experimental comparative studybetween the Wave MOSFET layout style ("S" shape gategeometry) and the Conventional MOSFET (conventional rectangulargate geometry usually called as Bulk) counterpart in order toverify and quantify the benefits that the Wave structure can bringto improve the performance of devices in analog circuits,especially in terms of the drain current in the saturation region(IDSat), the transconductance(gm), the ratio of transconductance over the draincurrent (gm/IDS) as a function of the ratio of thedrain current normalized by the geometric factor(IDS/fg), the frequency response [voltage gain(Av) and the unit voltage gain frequency (fT)].Verifying the comparison between the Wave MOSFET and theConventional MOSFET on this paper the designer will take a chanceto understand the analysis that can be executed for any otherdevice

Notes:

Vendor supplied data

Publisher Number:

2012-36-0209

Access Restriction:

Restricted for use by site license