Using OCTO SOI nMOSFET to Handle High Current for Automotive Modules General Motors

Format:

Conference/Event

Author/Creator:

Navarenho de Souza Fino, Navarenho de Souza Fino, author.

Contributor:

Gimenez, Salvador Pinillos

Conference Name:

21st SAE Brasil International Congress and Exhibition (2012-10-02 : Sao Paulo, Brazil)

Language:

English

Physical Description:

1 online resource

Place of Publication:

Warrendale, PA SAE International 2012

Summary:

This paper presents an experimental comparative study between the OCTOGONAL-Gate Silicon-on-Insulator (SOI) nMOSFET (OSM) and the conventional SOI nMOSFET (CSM) considering the same bias conditions and the same gate area (AG), in order to verify the influence of this new MOSFET layout style to handle high current for automotive modules. Analog integrated circuits (ICs) design tends to be considered an art due to a large number of variables and objectives to achieve the product specifications. The designer has to find the right tradeoffs to achieve the desired automotive specification such as low power, low voltage, high speed and high current driver. SOI MOSFET's technology is required to provide the growth of embedded electronics. This growth is driving demand for power-handling devices that are smaller yet still provide high current driver capabilities. To optimize the transistor's operation, attending the aggressive downscaling and automotive requirements, emerges the OCTO SOI nMOSFET as an alternative to answer the current driver and sizing question. In addition, this innovative layout style can provide low-power and more robustness against Electromagnetic Interference (EMI), Electro Static Discharge (ESD), according to Electromagnetic Compatibility (EMC)

Notes:

Vendor supplied data

Publisher Number:

2012-36-0211

Access Restriction:

Restricted for use by site license