Planar Semiconductor Temperature Sensor for Automotive Applications Texas Instruments Incorporated

Format:

Conference/Event

Author/Creator:

Wiemer, K. C., author.

Conference Name:

1977 International Automotive Engineering Congress and Exposition (1977-02-28 : Detroit, Michigan, United States)

Language:

English

Physical Description:

1 online resource

Place of Publication:

Warrendale, PA SAE International 1977

Summary:

The theory of silicon temperature sensor and the design of a planar sensing chip are discussed. The temperature-resistance function is essentially logarithmic with a TCR of 0.7%/°C near room temperature. Nominal, polarity-independent resistance values (@ 25°C) from 100 to 5000 ohms are attainable; the discussion, however, will be restricted to 1.0 and 3.3 K ohm devices. Resistance-temperature characteristics of planar silicon sensors are compared to those of currently available metal-wire sensors and thermistors. Due to the small size of the actual sensing chip (15 x 15 x 6 mil3) the heat-transfer characteristics of the sensor are determined almost entirely by the packaging configuration; thermal response and dissipation data are presented for an axial-lead glass diode package and a plastic (SilectT) transistor package and comparison is made with the characteristics of conventional silicon sensors. The use of the silicon sensor in automotive applications is briefly discussed.T - trademark of Texas Instruments Incorporated

Notes:

Vendor supplied data

Publisher Number:

770395

Access Restriction:

Restricted for use by site license