High Power and High Temperature Passive Application of CVD Diamond U.S. Air Force, AFRL/PRPE, Wright-Patterson AFB

Format:

Conference/Event

Author/Creator:

Heidger, Susan L., author.

Conference Name:

Power Systems Conference (2002-10-29 : Coral Springs, Florida, United States)

Language:

English

Physical Description:

1 online resource

Place of Publication:

Warrendale, PA SAE International 2002

Summary:

Polycrystalline diamond films produced by Microwave Plasma Enhanced Chemical Vapor Deposition were investigated for use as dielectric material for advanced passive devices needed in pulsed power applications. CVD diamond films that were heat treated in air from 250°C to 450°C for 2hrs. had very steady dielectric constants, ranging from 5 to 6.5, and very low losses, less than 0.005, over 100 to 106Hz at room temperature. Dielectric constants varied by less than 5% with temperature cycling to 500°C and losses remained very low (less than 0.01). Resistivities of CVD diamond heat treated in air were two to three orders of magnitude higher than the as-deposited samples. Breakdown strength, I-V and charge-discharge characteristics were also measured. Surface termination was examined to explain differences in the electrical performance of heat treated and as-deposited CVD diamond

Notes:

Vendor supplied data

Publisher Number:

2002-01-3178

Access Restriction:

Restricted for use by site license