SOI Smart Power IC Technology for Automotive ECUs and Smart Actuators IC Engineering Department, Denso Corporation

Format:

Conference/Event

Author/Creator:

Ueda, Nobumasa, author.

Conference Name:

SAE 2003 World Congress & Exhibition (2003-03-03 : Detroit, Michigan, United States)

Language:

English

Physical Description:

1 online resource

Place of Publication:

Warrendale, PA SAE International 2003

Summary:

We started to fabricate 4um design rule SOI (Silicon On Insulator) smart power ICs since 1996 for automotive applications. Now we developed 0.8um design rule SOI smart power ICs. These ICs are using trench dielectric isolation technology, employing an SOI wafer and deep trench etching. This technology could be used to integrate 0.8um CMOS transistors as digital devices, DMOS (Double diffused MOS) transistors as power devices, high breakdown voltage bipolar transistors as analog devices, and to create thin film resistors for high precision resistance, which could be trimmed using a laser. SOI smart power ICs suits various ECUs (Electronic Control Units) and smart actuators for automotive applications, due to its non-parasitic elements and high temperature operation. We describe the requirements of devices for automotive applications and the features of SOI Smart Power ICs

Notes:

Vendor supplied data

Publisher Number:

2003-01-0203

Access Restriction:

Restricted for use by site license