Sputtered Barium Titanate, Lead Zirconate Titanate, Barium Strontium Titanate Films for Capacitor Applications U.S. Air Force, AFRL/PRPE, Wright-Patterson AFB

Format:

Conference/Event

Author/Creator:

Tsao, Bang-Hung, author.

Conference Name:

Power Systems Conference (2000-10-31 : San Diego, California, United States)

Language:

English

Physical Description:

1 online resource

Place of Publication:

Warrendale, PA SAE International 2000

Summary:

Thin barium titanate(BT), lead zirconate titanate(PZT), barium strontium titanate(BST) films are being developed for use in microelectronics, electromechanical and optoelectronic applications. Thin BaTiO3, Pb(ZrTi)O3 and (BaSr)TiO3 film capacitor devices were fabricated using RF sputtering techniques. The typical dielectric constant of these film capacitors was in the range of 300 to 1140. These film capacitors had dissipation factors between 0.2% to 0.6 % before annealing and 4-6% after annealing. The film capacitors have breakdown voltages in the range of 1105 V/cm to 1.2106 V/cm. The resistivity was in the range of 1010 to 1012 ohm-cm before annealing and 1013 to 1014 ohm-cm after annealing. The capacitance of films produced to-date had little dependence on frequency. Thermal cycling in the temperature range of 50 to 300°C had very limited impact on the capacitance and dissipation factor. Measurements of dielectric and material properties are reported

Notes:

Vendor supplied data

Publisher Number:

2000-01-3653

Access Restriction:

Restricted for use by site license