GMR Revolution Sensors for Automobiles Mitsubishi Electric Corporation

Format:

Book

Conference/Event

Author/Creator:

Taguchi, M., author.

Conference Name:

SAE 2000 World Congress (2000-03-06 : Detroit, Michigan, United States)

Language:

English

Physical Description:

1 online resource cm

Place of Publication:

Warrendale, PA SAE International 2000

Summary:

We have developed a new series of revolution sensors using Giant Magnetoresistive (GMR) elements. We call these GMR revolution sensors. In automotive applications, revolution sensors have traditionally utilized Hall effect and anisotropic magnetoresistive (AMR) elements. Recently, more sensitive revolution sensors are necessary for improved control of engines, braking systems and automatic transmissions. Since GMR elements have one order higher MR ratio than AMR elements, GMR revolution sensors are much more sensitive. Furthermore, GMR elements have been integrated with circuits on Si substrates. This integration simplify the assembly process and increases the reliability of the GMR revolution sensors. This paper discusses the superiority of GMR sensing elements over Hall and AMR elements. This paper also reports the characteristic results of the GMR sensor

Notes:

Vendor supplied data

Publisher Number:

2000-01-0540

Access Restriction:

Restricted for use by site license