High Breakdown-Voltage and High-Linearity Camel-Gate Field-Effect Transistor with Multiple Modulation-Doped Channels Chien Kuo College of Technology and Commerce

Format:

Conference/Event

Author/Creator:

Tsai, Jung-Hui, author.

Conference Name:

34th Intersociety Energy Conversion Engineering Conference (1999-08-02 : Vancouver, Canada)

Language:

English

Physical Description:

1 online resource

Place of Publication:

Warrendale, PA SAE International 1999

Summary:

A high breakdown-voltage and high-linearity field effect transistor based on n-p-n structure, id est, camel-gate field-effect transistor (CAMFET), has successfully fabricated and demonstrated. The CAMFET employs very thin n+ and p+ layers together with the channel to form a majority-carrier camel diode for modulating the channel current. The breakdown voltage about 21 V is obtained Furthermore, the maximum drain saturation current and transconductance are as high as 770 mA/mm and 220 mS/mm, respectively. Consequently, for the tri-step doping channel CAMFET, not only have the voltage-independent but also the high transconductance are obtained

Notes:

Vendor supplied data

Publisher Number:

1999-01-2492

Access Restriction:

Restricted for use by site license