A High-Breakdown Voltage n+-GaAs/δ (p+)-GaInP/n-GaAs Heterojunction Camel-Gate Transistor for Power System Applications National Cheng-Kung Univ

Format:

Conference/Event

Author/Creator:

Liu, W. C., author.

Conference Name:

34th Intersociety Energy Conversion Engineering Conference (1999-08-02 : Vancouver, Canada)

Language:

English

Physical Description:

1 online resource

Place of Publication:

Warrendale, PA SAE International 1999

Summary:

A high-breakdown-voltage n+-GaAs/δ (p+)-GaInP/n-GaAs camel-gate field-effect transistor with the triple-step doped-channel has been successfully fabricated and demonstrated. Experimentally, the high gate turn-on voltage of 1.6 V at a gate current of 1 mA/mm and a very high breakdown voltage of 40 V with the low gate leakage current of 400 μA/mm are obtained. The measured transconductance is 145 mS/mm with the current gain cut-off frequency fT of 17 GHz and the maximum oscillation frequency fmax of 33 GHz for a 1100 um2 device. Consequently, based on the remarkable experimental results, the studied device shows a promise for high-power circuit applications

Notes:

Vendor supplied data

Publisher Number:

1999-01-2494

Access Restriction:

Restricted for use by site license