A Triangular-Barrier Optoelectronic Switch with Light-Controllable Performances

Format:

Conference/Event

Author/Creator:

Guo, Der-Feng, author.

Conference Name:

34th Intersociety Energy Conversion Engineering Conference (1999-08-02 : Vancouver, Canada)

Language:

English

Physical Description:

1 online resource

Place of Publication:

Warrendale, PA SAE International 1999

Summary:

A GaAs-InGaP triangular-barrier optoelectronic switch, grown by metalorganic chemical vapor deposition (MOCVD), was fabricated. Owing to the avalanche multiplication and carrier confinement in the device operation, S-shaped negative-differential-resistance (NDR) performances were observed in the current-voltage (I-V) characteristics under normal and reverse operation modes. The device showed a flexible optical function related to the potential barrier height controllable by incident light. The dependence of the carrier transport mechanism on illumination was investigated

Notes:

Vendor supplied data

Publisher Number:

1999-01-2495

Access Restriction:

Restricted for use by site license