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Poly-Si TFT Active Matrix Fluorescent Indicator Panel NEC Corporation Display Device Div
- Format:
- Book
- Conference/Event
- Author/Creator:
- Akiyama, T., author.
- Conference Name:
- International Congress & Exposition (1991-02-25 : Detroit, Michigan, United States)
- Language:
- English
- Physical Description:
- 1 online resource cm
- Place of Publication:
- Warrendale, PA SAE International 1991
- Summary:
- A new graphic-type FIP® (Fluorescent Indicator Panel) combines conventional FIP elements with a poly-Si thin-film transistor (TFT) active matrix (AM). The matrix is capable of incorporating memory function in each picture element to drive the phosphor in static mode.A prototype device with 24 x 24 picture elements in a 12 x 12 mm size shows brightness levels exceeding 200 fL (600 cd/m2) at a 25-volt driving voltage. Its characteristics are stable after the sealing process at 450°C for about 30 minutes. With continuing improvement, this device will be available as a terminal display in an automotive navigation system
- Notes:
- Vendor supplied data
- Publisher Number:
- 910353
- Access Restriction:
- Restricted for use by site license
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