Low-Voltage and High-Brightness AC Thin-Film Electroluminescent Device Prepared by Molecular Beam Epitaxy Electronic Technical Div. Nippon Seiki Company, Limited

Format:

Book

Conference/Event

Author/Creator:

Yokoyama, Meiso, author.

Conference Name:

SAE International Congress & Exposition (1988-02-29 : Detroit, Michigan, United States)

Language:

English

Physical Description:

1 online resource cm

Place of Publication:

Warrendale, PA SAE International 1988

Summary:

High brightness and low-voltage-driven AC thin-film electroluminescent (ACTFEL) devices were prepared by molecular beam epitaxy (MBE) and their EL properties were compared with those of a vacuum deposited (VD) ACTFEL device. From the brightness-voltage curve, a threshold voltage of 45.5 V and a maximum brightness of 523 ft-L (5 kHz, 73.5 V) were obtained. Besides a luminance of 300 ft-L was achieved at 58.5 V when the device was operated with 5 kHz sinusoidal wave. These values were superior to those of a VD-prepared ACTFEL device. Therefore, it was suggested that MBE is one of the most effective techniques to obtain ACTFEL devices with high performances

Notes:

Vendor supplied data

Publisher Number:

880216

Access Restriction:

Restricted for use by site license