HWBE and FE Growths Techniques of the Semiconductors Compounds with Applications in Thermal Infrared Devices Universidade de São Paulo - USP, Escola de Engenharia de Lorena - EEL

Format:

Conference/Event

Author/Creator:

Renosto, Sergio Tuan, author.

Conference Name:

SAE Brasil 2007 Congress and Exhibit (2007-11-28 : Sao Paulo, Brazil)

Language:

English

Physical Description:

1 online resource

Place of Publication:

Warrendale, PA SAE International 2007

Summary:

Infrared detectors are radiant energy transducers, which convert this energy in electric energy, and usually have to be cooled and kept at 77 K to work property. A tool that comes if shown sufficiently useful of research is the thermographic that is the technology of acquisition of images generated from the capitation of the thermal infrared radiation. To detect these emissions of is extreme importance for aeronautical and warlike industries. Analyzes generates by Scanning Electronic Microscopy (SEM) and X-Ray Diffraction were used in order to compare epitaxial layers of the semiconductor with narrow gap lead telluride (PbTe), grown of high quality by Hot Wall Beam Epitaxy technique (HWBE or only HWE) and Flash Evaporation (FE), directly over single crystal silicon (Si) wafers, p-type. These heterojunctions are used as thermal infrared detectors, which work at room temperature [1]

Notes:

Vendor supplied data

Publisher Number:

2007-01-2596

Access Restriction:

Restricted for use by site license