High Temperature Packaging and Pulse Testing of Parallel SiC Thyristors U.S. Army Research Laboratory

Format:

Conference/Event

Author/Creator:

Geil, Bruce R., author.

Conference Name:

Power Systems Conference (2006-11-07 : New Orleans, Louisiana, United States)

Language:

English

Physical Description:

1 online resource

Place of Publication:

Warrendale, PA SAE International 2006

Summary:

For fast rise time, high peak current pulse power applications, Silicon Carbide (SiC) is ideal due to its ability to tolerate high localized temperatures generated during switching. Several 4 mm 4 mm SiC Gate Turn-Off thyristors (GTOs) manufactured by CREE were evaluated. Testing for individual and paired devices was performed under both single and repetitive pulsing using variable pulse duration, ring-down capacitor discharge circuit. At 150 °C, maximum single shot currents as high as 3.2 kA have been shown for single devices at a 50% pulse width of 2 μsec while parallel devices have shown a maximum of 4.4 kA at 150 °C

Notes:

Vendor supplied data

Publisher Number:

2006-01-3106

Access Restriction:

Restricted for use by site license