Development of a High Temperature Power Module Technology with SiC Devices for High Density Power Electronics EADS France - Innovation Works

Format:

Conference/Event

Author/Creator:

Cissé, Cissé, author.

Contributor:

Carrillo, Francisco

Iturriz, Marcelo

Massiot, Gregor

Munier, Catherine

Vidal, Paul-Etienne

Conference Name:

Aerospace Technology Conference & Exposition (2011-10-18 : Toulouse, France)

Language:

English

Physical Description:

1 online resource

Place of Publication:

Warrendale, PA SAE International 2011

Summary:

This paper presents the development of a high density packagingtechnology for wide band gap power devices, such as silicon carbide(SiC). These devices are interesting candidates for the nextaircraft power electronic converters. Effectively they achieve highswitching frequencies thanks to the low losses level. Highswitching frequencies lead to reduce the passive components sizeand to an overall weight reduction of power converters.Moreover, SiC devices may enable operation at junctiontemperatures around 250°C. The cooling requirement is much lessstringent than for usual Si devices. This might considerablysimplify the cooling system, and reduce the overall weight.To achieve the integration requirements for SiC devices,classical wire bonding interconnection is replaced by a stackedpackaging using bump interconnection technologies, called sandwich.These technologies offer two thermal paths to drain heat out andpresent more power integration possibilities.To make reliable sandwich packaging, high temperature solderalloys using low temperature processes are evaluated. Among theseassembly techniques, there are the Transient Liquid Phase bondingwith Au-Sn solder alloy and the nanopaste silver sinteringtechnique. These techniques are studied as solder assemblysolutions to ensure the die-attach and the bumps interconnects.Therefore, the thermo-mechanical behavior of sandwich packagingusing silver sintering process and various bump configurations wereevaluated under a thermal cycling profile between -40°C and +185°Cby means of numerical simulation. Finally, the design optimizationof these high temperature packaging technologies is pointedout

Notes:

Vendor supplied data

Publisher Number:

2011-01-2620

Access Restriction:

Restricted for use by site license