A 1200-V 600-A Silicon-Carbide Half-Bridge Power Module for Drop-In Replacement of an IGBT IPM Mississippi State Univ

Format:

Conference/Event

Author/Creator:

Gafford, Gafford, author.

Contributor:

Bondarenko, Volodymyr

Casady, Jeffrey

Mazzola, Michael S.

Molen, Marshall

Parker, Chris

Sheridan, David

Conference Name:

SAE 2010 World Congress & Exhibition (2010-04-13 : Detroit, Michigan, United States)

Language:

English

Physical Description:

1 online resource

Place of Publication:

Warrendale, PA SAE International 2010

Summary:

A 1200-V, 600-A silicon carbide (SiC) JFET half-bridge modulehas been developed for drop-in replacement of a 600-V, 600-A IGBTintelligent power module (IPM). Advances in the development of SiCfield effect transistors have resulted in reliable high yielddevices that can be paralleled and packaged to produce high-voltageand high-current power modules not only competitive with existingIGBT technology but the modules have expanded capabilities. A SiCvertical junction field effect transistor VJFET has been producedwith the properties of lower conduction loss, zero tail current,higher thermal conductivity, and higher power density when comparedto a similarly rated silicon IGBT or any practical SiC MOSFETspreviously reported.Three prototype SiC JFET half-bridge modules with gate drivershave been successfully integrated into a three-phase 30-kW(continuous), 100-kW (intermittent) AC synchronous motor drivedesigned to control a traction motor in an electric vehicle. Thecommercially available motor drive, originally designed for siliconIGBT IPMs, was evaluated in conjunction with a permanent-magnetbrushless DC motor on a dynamometer. Normal operation of the motordrive using field-oriented control and pulse-width modulation at12.5 kHz was observed. Characterization of the SiC power module inthe forward bias safe operating area demonstrated up to a 50%reduction in forward conduction losses as compared to the siliconIGBT IPM it replaces. The lack of a body diode in the SiCvertical-channel JFET is one major advantage of this switchtopology allowing SiC Schottky barrier diodes to be used as theanti-parallel rectifier without undesirable conduction through aMOSFET body diode. Modules have been constructed using bothdepletion mode and enhancement mode 1200-V VJFET switches withindustry leading low specific on resistance (4 mΩ-cm₂) produced bySemiSouth Laboratories

Notes:

Vendor supplied data

Publisher Number:

2010-01-1251

Access Restriction:

Restricted for use by site license