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High Temperature, High Frequency SiC Three Phase Inverter for Aircraft Applications Arkansas Power Electronics International

SAE Technical Papers (1906-current) Available online

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Format:
Conference/Event
Author/Creator:
Cilio, Cilio, author.
Contributor:
Lostetter, Alex
McPherson, Brice R.
Mitchell, Gavin
Schupbach, Roberto
Conference Name:
Power Systems Conference (2010-11-02 : Fort Worth, Texas, United States)
Language:
English
Physical Description:
1 online resource
Place of Publication:
Warrendale, PA SAE International 2010
Summary:
This paper presents the results of a silicon-carbide-based 300V5 kW fully functional three-phase inverter module operating at hightemperatures and device junctions up to 200°C. Each phase powermodule employs eight SemiSouth 100 mΩ/1200V SiC JFETs (SJEP120R100)in parallel per switch position. The paper will highlight both theelectrical and the thermo-mechanical design. Experimental resultsvalidating the overall design will also be discussed.The core of the electrical design was to take advantage of thelow input capacitance, high switching frequency (50 kHz) and hightemperature capability of the SiC JFET in order to obtain a highpower density inverter. Since SemiSouth's SiC JFET is arelatively new device, computer models are not currently availablefrom the manufacturer, which presents a hurdle during the designstage. In order to produce reliable performance predictions, theteam has focused on developing a model for the SiC JFETs ultimatelyused. This paper will cover some of the strategies used toimplement a first degree approximation model for the SiC devices.Since enhancement-mode SiC power JFETs (such as the ones used inthe prototype) have a gate behavior different from that oftraditional MOSFET-type devices, this paper will also present thegate driver strategy and ultimate gate driver hardware prototypedeveloped to properly drive the enhancement mode SiC JFETs.Packaging topics covered include material selection, hightemperature processing issues, power substrate design, and systemthermal analysis. Concluding the paper are the high temperatureelectrical test results of the prototype system
Notes:
Vendor supplied data
Publisher Number:
2010-01-1798
Access Restriction:
Restricted for use by site license

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