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Zth Thermal Modelling of MOSFET in Sub-Milliseconds Range International Rectifier Company
- Format:
- Conference/Event
- Author/Creator:
- Trần, Thanh, author.
- Conference Name:
- SAE 2004 World Congress & Exhibition (2004-03-08 : Detroit, Michigan, United States)
- Language:
- English
- Physical Description:
- 1 online resource
- Place of Publication:
- Warrendale, PA SAE International 2004
- Summary:
- 1AbstractAn FEA (Finite Element Analysis) model was developed based on the physical dimension of the MOSFET device to produce a Zth curve closely matching the experimental Zth curve. This Finite Element Analysis model would then be extrapolated down to the region beyond the capability of the hardware of the Zth measurement system
- Notes:
- Vendor supplied data
- Publisher Number:
- 2004-01-1684
- Access Restriction:
- Restricted for use by site license
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