Design and Characterization of AlScN-Based Ferroelectric Devices for Non-Volatile Memory Applications Kwan-Ho Kim

Format:

Book

Thesis/Dissertation

Author/Creator:

Kim, Kwan-ho, author.

Contributor:

University of Pennsylvania. Electrical and Systems Engineering., degree granting institution.

Language:

English

Subjects (All):

0537.

0544.

0794.

Local Subjects:

0537.

0544.

0794.

Physical Description:

1 electronic resource (140 pages)

Contained In:

Dissertations Abstracts International 87-07B

Place of Publication:

Ann Arbor : ProQuest Dissertations and Theses, 2025

Language Note:

English

Summary:

Ferroelectric materials are key enablers of emerging non-volatile memory (NVM) technologies, offering remnant polarization, fast switching, and scalability for beyond-CMOS applications. This dissertation presents a comprehensive study of wurtzite-type aluminum scandium nitride (AlScN) as a CMOS back-end-of-line (BEOL)-compatible ferroelectric platform and its device-level implementations for non-volatile memory.In Chapter 1, I introduce the unique ferroelectric properties of wurtzite-type materials and compare them with other ferroelectric materials, highlighting the advantages of AlScN. I also discuss the promise of transition metal dichalcogenides (TMDs) as channel materials for next-generation electronics. Finally, I describe four representative ferroelectric memory device architectures, outlining their respective strengths and limitations, and emphasizing the opportunities that arise when leveraging AlScN. Together, these discussions establish the material and device context that forms the foundation for the subsequent chapters.In Chapter 2, I demonstrate the first integration of scalable AlScN ferroelectric field-effect transistors (FeFETs) with two-dimensional (2D) semiconductor channels. Through careful control of scandium composition and systematic electrical measurements, including I-V, P-V, and PUND analysis, I elucidate device performance, retention, and endurance, showing that AlScN/2D FeFETs are promising for low-power, high-density memory applications.In Chapter 3, I advance the FeFET platform through contact engineering of WSe₂ channels, achieving polarity control of n-, p-, and ambipolar-FeFETs. This work highlights how interface engineering enhances ferroelectric gating efficiency, suppresses depolarization effects, and improves the ON-state current, enabling more versatile device functionality.In Chapter 4, I explore ultrathin AlScN-based ferroelectric diodes (FeDs) as two-terminal memory elements for high-density crossbar arrays. By incorporating interlayer dielectrics, I demonstrate scaled devices down to 5 nm with significantly improved rectification and ON/OFF ratios, multistate capability up to 5 bits, and robust retention. A compact physical model further explains the underlying transport and polarization switching mechanisms.Together, these studies establish ferroelectric AlScN as a versatile and scalable material platform for non-volatile memory devices, spanning both transistor- and diode-based architectures. The results bridge fundamental material insights with device-level engineering, underscoring the potential of AlScN ferroelectrics for future memory-driven computing and 3D monolithic integration

Notes:

Advisors: Jariwala, Deep Committee members: Olsson , Roy H., III; Stach, Eric A.

Source: Dissertations Abstracts International, Volume: 87-07, Section: B.

Ph.D. University of Pennsylvania 2025

Vendor supplied data

Local Notes:

School code: 0175

ISBN:

9798276001418

Access Restriction:

Restricted for use by site license