Nanoelectronics : physics, technology and applications / Rutu Parekh and Rasika Dhavse.

Format:

Book

Author/Creator:

Parekh, Rutu, author.

Dhavse, Rasika, author.

Series:

IOP Ebooks Series

Language:

English

Subjects (All):

Nanoelectronics.

Physical Description:

1 online resource (331 pages)

Edition:

First edition.

Place of Publication:

Bristol, England : IOP Publishing, [2023]

Summary:

This course text provides comprehensive coverage for fundamental and advanced courses in nanoelectronics. It provides insight into the future of electronics, emerging devices, logic and memory, sensors, systems architecture, nanofabrication, and the fundamental physics behind nanoelectronics.

Contents:

Outline placeholder

Philosophy and goals

Prerequisites

Organisation

Notes to the readers

Acknowledgements

Author biographies

Rutu Parekh

Rasika Dhavse

Chapter Physical and technological limitations of nano-CMOS devices to the end of the roadmap and beyond

1.1 MOSFETs and their scaling

1.1.1 n-Channel MOSFETs

1.1.2 p-Channel MOSFET

1.1.3 Working principle of MOSFETs

1.1.4 Introduction and failure of Moore's law

1.2 Limitations and showstoppers arising from CMOS scaling, and technological options for MOSFET optimisation

1.2.1 ITRS: The International Technology Roadmap for Semiconductors

1.2.2 Update beyond the end of the roadmap

1.2.3 The show must go on!

Questions

References

Chapter Introduction and overview of nanoelectronics

2.1 Introduction

2.1.1 Nanotechnology

2.1.2 Nanoelectronics

2.2 Market requirements for nanoelectronics

2.3 Nanofabrication

Chapter Introduction to the quantum theory of solids

3.1 Classical particles, classical waves and quantum particles

3.1.1 Classical particles

3.1.2 Energy of classical free particles

3.1.3 Classical waves

3.1.4 Mathematical interpretation of a wave

3.2 Quantum particles and principles of quantum mechanics

3.3 Quantum tunnelling

3.4 Quantum confinement

3.5 Schrodinger's wave equation-meaning, boundary conditions and applications

3.5.1 Schrodinger's equation

3.5.2 The solution of Schrodinger's equation and potential well

3.5.3 Interpretation of wave function in terms of probability density function

3.5.4 Application of Schrodinger's equation in atomic structure

3.6 Significance of the band theory of solids

3.7 Factors affecting the energy band gap

3.8 Fermi statistics and electrical conduction in solids

3.8.1 Spin of a particle.

3.8.2 Pauli's exclusion rule

3.8.3 Fermi level

3.8.4 Fermi-Dirac distribution

3.8.5 The density of state for solids

3.8.6 Electron density in a conductor

Chapter Emerging research devices for nanocircuits

Extending the channel of MOSFETs to the end of the roadmap

Extended CMOS (charge-based devices)

Beyond CMOS (non-charge-based devices)

4.1 Channel-replacement devices

4.2 Graphene

4.3 Fullerenes and carbon nanotubes

4.3.1 Synthesis and fabrication of carbon nanotubes

4.3.2 Carbon nanotube FETs

4.3.3 Applications of carbon nanotubes

4.4 Tunnel field-effect transistor

4.4.1 Fabrication of tunnel field-effect transistor devices

4.4.2 Optimisation of tunnel field-effect transistor and scope of device design

4.5 Nanowire field-effect transistors

4.6 P-type III-V channel-replacement devices

4.7 N-type Ge channel-replacement devices

4.8 Potential evaluation-extending MOSFETs to the end of the roadmap

4.9 Quantum confinement and associated devices

4.10 Quantum-mechanical tunnelling and Coulomb blockade in a single-electron transistor

4.10.1 Orthodox theory

4.11 Structure and working principle of single-electron transistors

4.11.1 Modelling approaches for SETs

4.12 Other quantum structures and their applications

4.12.1 Quantum dots

4.12.2 Quantum wires

4.12.3 Quantum wells

4.13 Nanoelectromechanical systems

4.14 Atomic switches

4.14.1 Two-terminal switches

4.14.2 Three-terminal switches

4.15 Mott FETs

4.16 Negative-capacitance FETs

4.17 Alternative information-processing devices

4.17.1 Spintronics and magnetism

4.17.2 SpinFETs and SpinMOSFETs

4.17.3 Spin torque majority gate

4.17.4 Bilayer pseudo-spin field-effect transistors (BisFETs)

4.17.5 ExcitonicFETs

References.

Chapter Emerging memory devices

5.1 Memristors

5.2 Magnetoresistive effect for memory applications

5.2.1 Giant magnetoresistance

5.2.2 Tunnel magnetoresistance

5.3 Magnetoresistive RAM

5.3.1 Writing in MRAM

5.4 Spin-transfer torque magnetic random access memory

5.5 All-spin logic

5.6 Phase-change memory

5.7 Resistive random access memory

5.8 Ferroelectric RAM

5.8.1 Ferroelectric field-effect transistors

5.8.2 Ferroelectric tunnel junctions

5.9 Mott memory

5.10 Carbon-based emerging memory devices

5.11 Molecular memory

5.11.1 Single-molecule magnets

5.11.2 Porphyrin-based polymers

5.11.3 Nonvolatile molecular memory

5.12 Macromolecular memory

5.12.1 Macromolecules

5.12.2 Polymers

5.12.3 Dipole moments

5.12.4 Bistable dipole moments

5.13 Racetrack memory

5.14 Comparison of memory types

Chapter Modelling and simulation

6.1 Technology modelling and simulation

6.1.1 Device modelling

6.1.2 Device modelling tools and technologies

6.2 Circuit simulators

6.3 Monte Carlo simulation

6.4 Microelectromechanical/nanoelectromechanical device simulators

6.4.1 COMSOL Multiphysics® simulator

6.4.2 CoventorWare tools

6.5 System-level design

6.5.1 Lumped-element modelling using equivalent circuits

6.5.2 Hierarchical abstraction of MEMS and analytical behavioural modelling

6.5.3 MEMS behavioural modelling based on finite and boundary element analysis

Chapter Nanofabrication

7.1 Microfabrication techniques

7.1.1 Property modification (doping)

7.1.2 Patterning

7.1.3 Subtractive processes

7.1.4 Oxidation

7.1.5 Deposition

7.2 Limits of photolithography and advanced lithographic processes

7.2.1 Electron-beam (E-beam) lithography

7.2.2 X-ray lithography.

7.2.3 Nanoimprint lithography

7.3 Self-assembly processes

7.3.1 Molecular self-assembly

7.3.2 Self-assembly for colloidal particles

7.4 Nano measurement and characterisation tools

7.4.1 Energy-dispersive X-ray spectroscopy

7.4.2 Electron microscopy

7.5 Thin-film technology and synthesis

7.6 Microelectromechanical, microoptoelectromechanical systems and nanoelectromechanical technologies

7.6.1 Bulk micromachining

7.6.2 Surface micromachining

7.6.3 Material aspects of micromachining

7.6.4 Wafer bonding

7.6.5 High-aspect-ratio micromachining

7.7 Process integration

Chapter Emerging nanoelectronic architectures

8.1 Storage class memory

8.2 Morphic computing: the architectures that can learn

8.2.1 Neuromorphic architecture

8.2.2 Quantum-dot cellular automata architecture

8.2.3 Cortical architecture

Chapter Nanosensors and transducers

9.1 Introduction to sensors science and technology

9.2 Nanosensors and transducers in food industry, healthcare and defence

9.2.1 Nanosensors and transducers in the food industry

9.2.2 Nanosensors and transducers in healthcare

9.2.3 Application of nanosensors and transducers in defence

9.3 Metal nanoparticles and quantum-dots-based sensors

9.3.1 Gold-nanoparticles-based biosensors

9.3.2 Metal-nanoparticles-based colorimetric sensors

9.3.3 Quantum-dots-based sensors

9.4 Carbon-nanotubes-based sensors

9.5 Electronic skin based on nanotechnology

9.6 Microelectromechanical/nanoelectromechanical sensors

9.6.1 Cantilever sensors

9.6.2 Graphene nanoelectromechanical resonators

9.6.3 Single-chip-based nano-optomechanical accelerometer

Notes:

Description based on publisher supplied metadata and other sources.

Description based on print version record.

Includes bibliographical references.

ISBN:

9780750348133

0750348135

OCLC:

1429740601