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Physica status solidi / A. Volume 88, Number 1, May 16 / ed. by Görlich.
- Format:
- Book
- Author/Creator:
- Görlich.
- Series:
- Physica status solidi / A. ; Volume 88, Number 1
- Language:
- English
- Physical Description:
- 1 online resource (520 p.)
- Edition:
- Reprint 2021
- Place of Publication:
- Berlin ; Boston : De Gruyter, [2022]
- Language Note:
- In English.
- Summary:
- No detailed description available for "May 16".
- Contents:
- Frontmatter
- Classification Scheme
- Author Index
- Physica status solidi (a) applied research
- Contents
- Review Article
- Injection of Degenerate Electron-Hole Plasma
- Original Papers and Short Notes
- Structure
- AC Conductivity, Calorimetric, X-Ray, and Raman Study of the Hexagonal Phase TlInS2-III
- Coherence Description of a Double Crystal Diffractometer
- Effect of Structure Transformation on Creep and Creep Recovery of Al-14 wt%Zn
- Exact Solution of the Takagi-Taupin Equation for Dynamical X-Ray Bragg Diffraction by a Crystal with a Transition Layer
- Double-Crystal Topographic Investigation of Misfit Dislocations in Silicon Epitaxial Layers
- Thin e-Phase Films Prepared by Alloy Evaporation
- Shape and Arrangement of the "Hexagonal Domain" and Distribution of Ferroelectric Domains in GASH Single Crystals
- Destructive Interference and Multiple Scattering Effects Observed in Ca K-Edge EXAFS Spectra
- Determination of Thermodynamic Parameters of the Amorphous Selenium Films Crystallization
- Phase Transition in the System Solid-Gas Admixture Due to the Macroscopic Defect Formation and Growth
- The Structure of Twist Boundaries in Terms of Surface Dislocations
- The Transformation e -> a" in Iron-Nitrogen Solid Solutions Studied by Mössbauer Spectrometry
- An X-Ray Interferometer with an Elastically Deformed Crystal
- The Application of Landau's Theory for Studying First-Order Phase Transitions by the Internal Friction Method
- Lattice properties
- Neutron Powder Diffraction Study of the Debye-Waller Factor in TiC and TiN Compounds and Comparison with X-Ray Results
- Surface Layers and Far-Infrared Quasi-Harmonic Oscillators in Triglycine Sulphate at 4 K
- Defects, atomistic aspects
- Dielectric Relaxations in Dy2O2
- Steady-State Creep and Strain Transients for Stress Change Tests in an Al-0.4 wt% Li Solid Solution Alloy
- Diffusion and Recrystallization Processes during Annealing of N+- and P+- Implanted LiNbO 3
- Dissociation of Superdislocations and Damping in the Ll2 Ordered Structure
- Dislocation-Structure Changes during the Dip Tests and the Dynamical Internal Stress in Al-Mg Alloys at High Temperatures
- The Strength and Plasticity of GaAs in Saturated Melts of Solvent Metals at the Temperature of Epitaxy
- Magnetism
- Magnetic Properties and 57 Fe Mössbauer Effect in V 1-x Fe x Alloys
- Elastic Behaviour of Mixed Li-Ni Ferrites
- Extended electronic states and transitions
- Monte-Carlo Simulation of keV-Electron Scattering in Solid Targets
- Localized electronic states and transitions
- Reflection and Fluorescence Emission Spectra in the Ag 1-x Cu x I System
- On the Kinetics of X-Ray Induced Luminescence in Natural Quartz
- Photoluminescence Spectra of Pb 1-x Sn x Te Epitaxial Layers and Heterostructures up to Room Temperature
- Interpretation of the Curves of Thermally Stimulated Luminescence in the Case of Tunneling Recombination
- Electric transport
- The Electronic Properties of Macromolecular Structures with Conjugated Bonds Obtained by Chemical Modification of Certain Aliphatic Polymers
- Negative Charge Transport in Fluorethylenepropylene by the Constant Current Method
- Properties of Sputtered Amorphous Silicon Films Prepared under a Reduced Pumping Speed
- A New Model for AC Conduction in Disordered Solids
- Microwave Anisotropy and Dichroism of Ferroelectric Crystals CH 3 NH 3 HgCl 3
- Theory of Transient Currents in Dielectrics at a Limited Level of Single Injection
- Charge Transport in Cu-Cd Ferrospinels
- Double Source Photoconductivity of InP:Fe
- Device-related phenomena
- The Characteristics of Thin-Film Gallium Phosphide MOS Structures with a Tunnel Transparent Native Anodic Oxide
- N-CdS/p-AgInSe2 Solar Cells by Electrodeposition
- Ion Beam Contacting of Silicon. II. Antimony in n-Silicon
- Combination of a Silicon Photodiode and a Scintillator as a Dose Rate Detector
- A Simple Model of MOS Transistors on Large-Grain Polycrystalline Silicon
- Radiation Effects in a Photo-Coupler with High-Energy Electrons and y-Rays and Recovery by Current Annealing
- Short Notes
- Structure Images of the Hexagonal Nb 5 Ge 3 (D88) Structure
- Stress-Induced Isothermal Formation of Films during LPE Growth of III-V Compounds with a/a=0
- Atomic Arrangement in Amorphous Er4Co3
- Mass-Spectrometry of Tungsten-Silicon System
- On the Connection between the Melting Temperature and the Parameters Obtained from Thermally Stimulated Depolarization Experiments
- On the Free Energies of Hexagonal Dislocation Loops at High Temperatures
- On the Behaviour of Iodine in PbTe and SnTe
- Doppler Broadening of the Annihilation Gamma Line in KCl and LiF
- On Obtaining f-T Characteristics without Hysteresis in Quartz
- Preparation and Magnetic Properties of YMnSi
- Some Remarks on the Applicability of the Positron Annihilation Technique for Studying the Electronic Structure of Metallic Glasses
- An Approximate Approach to Absorption Correction in Electron-Probe Microanalysis
- The Absorption Edge of Lead(II) in Oxide Systems
- The Influence of Isoelectronic Impurities on Intrinsic Deep Levels in Liquid Phase Epitaxial Gallium Arsenide
- A Simple Method for the Determination of Both Photoionization and Photoneutralization Cross Sections of Deep Levels by Optical DLTS
- On the Thermal Resistance and Its Possible Role in Thermoluminescence Measurements
- Drift Mobility of Electrons Parallel to the c-Axis in InSe
- Electrical Conductivity Measurements to Test for Rotating Sulfate Ions in Fast Ion Conductors
- Electrical Properties of CaMnO 3-o
- In 2 O 3 and In 2 O 3 :Sn (ITO) Films by Post-Oxidation of Metal Films
- Optimization of the Heat Treatment for Forming AuGe Based Contacts to n-GaAs
- Coordinate Sensitive Photoelement on the Basis of the Photoelectret State in Vitreous Semiconductors
- Optoelectronic Switches on the Basis of Mercuric Iodide (Red Phase, a-Hgl 2 )
- Optical Effect in Normally-Off GaAs MESFET
- Pre-Printed Titles
- Pre-Printed Titles of papers to be published in the next issues of physica status solidi (a) and physica status olidi (b)
- Backmatter
- Notes:
- Title from eBook information screen..
- Description based on online resource; title from PDF title page (publisher's Web site, viewed 31. Jan 2022)
- Description based on publisher supplied metadata and other sources.
- ISBN:
- 3-11-249512-8
- OCLC:
- 1553144781
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