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Physica status solidi / A. Volume 85, Number 1, September 16, 1984 / ed. by Görlich.
- Format:
- Book
- Series:
- Physica status solidi / A. ; Volume 85, Number 1
- Language:
- English
- Physical Description:
- 1 online resource (420 p.)
- Edition:
- Reprint 2021
- Place of Publication:
- Berlin ; Boston : De Gruyter, [2022]
- Language Note:
- In English.
- Summary:
- No detailed description available for "September 16, 1984".
- Contents:
- Frontmatter
- Classification Scheme
- Author Index
- Contents
- Review Article
- Effect of Dislocation Structure on Creep and Fracture of Metals and Alloys
- Original Papers and Short Notes
- Structure
- The Nature of Some Planar Defects in 2H Martensite of Cu-Al Alloys as Determined by HREM
- Partial Higher-Order Structure Factors in the Long-Wavelength Limit for Molten Cuprous Chloride
- Quantitative Interference Electron Microscopy for Spherical Objects
- Analysis of the Ground State of a Solid Solution with Interactions up to fc-th Coordination Spheres of the Crystal Lattice
- A Dark-Field TEM Method for Crystal Structure Determination of Cu-Rich Phases on Twins in Silicon
- Structural and Chemical Analysis of a Silicon Nitride Film on GraAs by Null Ellipsometry
- Coherence Properties of Radiation Diffracted by an Elastically Bent Crystal
- Defect Structure of ZnSe Crystals Investigated by Electron Microscopy
- Lattice properties
- Monocrystal-Polycrystal Elastic Constants of a Stainless Steel
- Structure and Molar Refraction and Its Wavelength Dependence at Different Alkali and Ammonium Halides
- Defects, atomistic aspects
- Kinetics of Vacancy Mechanism of the Solid-Liquid Transition in F.C.C. Metals
- On the Identification of the Nature of Stacking Faults in H.C.P. Materials
- Dislocation Pinning at Low Temperatures in Nb
- Infrared Spectroscopical and TEM Investigations of Oxygen Precipitation in Silicon Crystals with Medium and High Oxygen Concentrations
- Steady-State Creep and Strain Transients for Stress-Dip Tests in Polycrystalline Magnesium at 300 °C
- Structural Vacancies in Nonstoichiometric Compounds at High Pressure
- Effect of Ionizing Radiation on Optical Properties of Thallium Halides in the 0.36 to 15 μm Range
- Magnetism
- Yttrium Iron Garnet Films Substituted by Gd and Mn
- Method for Measurement of Magnetostriction Constants in (001) Thin Films Using FMR
- On the Inhibition of Dynamic Conversion in Bubble Garnet Domains by a Thin Midplane Layer
- Extended electronic states and transitions
- Energy-Depth Relation of Electrons in Bulk Targets by Monte-Carlo Calculations
- Temperature Dependence of Interband Optical Absorption of Silicon at 1152, 1064, 750, and 694 nm
- Kilovolt Electron Energy Loss Distribution in GaAsP
- Localized electronic states and transitions
- Electrical Measurements on Silver-Diffused GaAs
- Analysis of DLTS Curves of Aggregated Deep Level Impurities
- Origin of a Shallow Acceptor in Quenched Germanium
- Photoluminescence and Electrical Properties of Yapour Phase Epitaxial ZnSe Grown on GaAs
- Piezoelectrically Induced Charge Distributions around Dislocations in CdTe and HgCdTe
- Effect of the Stoichiometry Control on the Photoelectrical Properties of ZnSxSe 1-x
- Time-Resolved EPR on Polyacetylene
- Two Types of F-Centres and Thermoluminescence in BaFCl Crystals
- Energy Transfer between Excited Adsorbed Dye Molecules and Charged Defects in Insulator-Semiconductor Structures
- Electric transport
- AC Conductivity in Single Crystals and Compactions of TCNQ Complex Salts
- Conductivity in One-Dimensional Disordered Cs2TCNQ3 Salts
- Intensity and Temperature Dependence of Steady-State Photoconductivity Down to 8 K and DOS Distribution Obtained from These Measurements in a-Si:H
- Short Notes
- Formation of Pt Silicides by a Millisecond Laser Pulse
- The Neutron Diffraction of Molten TlCl, TIBr, and Tll
- In Vitro Characterization of Bioactivity of Glassy or Glass-Crystalline Implant Materials Using Auger Electron Spectroscopy
- DC Plasma Nitridation of Thin Aluminium Films
- Influence of Work Function Change Due to Oxygen Chemisorption on the Secondary-Ion Emission Probability
- On X-Ray Surface Diffraction
- Strain-Optical Constant ( p ^ ) of Mixed Crystals of KCl-KBr of Equimolar Concentration
- Qbservation of RF Pulses from Solids during Laser Irradiation
- Damage and Trapping Behaviour of Crystalline Silicon at Low Energy Deuterium Implantation
- Defect Structure Study with Planar Channeling in Pulse-Annealed Ion-Implanted Silicon
- Influence of Dislocation Core Density on Overheating Absence
- Relaxation Time and Electron Scattering Cross Section in Irradiated p-Silicon at Temperatures of Liquid Helium from Cyclotron Resonance Data
- Temperature Dependence of the Charge-Carrier'Removal Rate in n-GaAs Containing Defect Clusters
- Structure and Magnetic Properties of Nd2Fe14BH 2.7
- The Usefulness of the Photoacoustic Cell for Magnetic Measurements
- Crystallographic, Magnetic, and Electrical Properties of Nickel-Substituted Chromium Telluride
- Fluorescence Decay of Adsorbed Dye Molecules on Solid Surfaces
- Cathodoluminescence of InGaAsP
- Bipolar Photoconductivity and Hall Effect of the Acoustoelectric Current in CdTe
- Relaxation Peculiarities in TlSbSe2 Crystals
- Electrical Resistivity Studies on the Heusler Alloys Co2T 1-x Al 1+x(T = Ti or Zr)
- Current-Voltage Characteristic of the p-n Junction with an Exponential Impurity Distribution at Its Base Contact
- Pre-Printed Titles
- Notes:
- Description based on online resource; title from PDF title page (publisher's Web site, viewed 02. Mrz 2022)
- Description based on publisher supplied metadata and other sources.
- ISBN:
- 3-11-250136-5
- OCLC:
- 1301546564
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