EPM 87. Energy Pulse and Particle Beam Modification of Materials : International Conference held September 7-11, 1987 Dresden, G.D.R / Compiled by: Klaus Hennig [and nine others].

Format:

Book

Contributor:

Hennig, Klaus, editor.

Series:

Physical Research.

Physical Research

Language:

English

Subjects (All):

Semiconductors--Surfaces--Congresses.

Semiconductors.

Physical Description:

1 online resource (595 pages).

Edition:

Reprint 2022.

Place of Publication:

Berlin : De Gruyter, 2022.

Summary:

No detailed description available for "EPM 87. Energy Pulse and Particle Beam Modification of Materials".

Contents:

Frontmatter

CONTENTS

1. Invited papers

EPM'87 - STATE OF THE ART

ACCELERATION OF MICROPARTICLES

STUDY OF SILICON IMPLANTED BY HIGH DOSE OP IRON GROUP TRANSITION METALS

MODIFICATIONS INDUCED BY PULSED LASER IRRADIATION OF METALLIC SURFACES IN PRESENCE OF A BREAKDOWN PLASMA IN THE AMBIENT GAS

IMPURITY EFFECTS AT ION BEAM INDUCED DISORDERING OF HIGHLY DOPED SILICON

DIRECTIONS OF DEVELOPMENT OF ION BEAM APPLICATIONS TO MODIFICATIONS OF TOOL PROPERTIES IN POLAND

COMPARATIVE INVESTIGATION OF PHASE FORMATION IN Fe, A1 AND Ti AFTER NITROGEN ION IMPLANTATION

MECHANISMS OP STRUCTURE FORMATION IN LASER PULSE VAPOUR DEPOSITION

FUNDAMENTAL ASPECTS OP THERMALLY INDUCED SOI LAYER FORMATION

PULSED ION IMPLANTATION OF SILICON WITH SELENIUM

RAPID THERMAL PROCESSING FOR VLSI APPLICATION

SILICON ON INSULATOR STRUCTURES FOR VLSI FORMED BY ION BEAM SYNTHESIS

EFFECTS OP IMPURITY-DEFECT INTERACTIONS ON THE LATTICE SITE OCCUPATION OF IMPURITIES IN ION IMPLANTED METALS

THE PROCESS OF COMPOUNDS FORMATION BY ION IMPLANTATION

MICROSTRUCTURAL AND TRIBOLOGICAL STUDY OF IRON AND STEELS ION IMPLANTED WITH NITROGEN

ELECTRON BEAU AND UV-LASER MICROSTRUCTURE FORMATION BY DECOMPOSITION 0? SOLID METAL RESINATE FILMS

APPLICATIONS OF MICROFOCUSSED ION BEAMS

STRUCTURE OF CRYSTAL FILMS PREPARED BY VAPOR DEPOSITION AND SIMULTANEOUS ION BOMBARDMENT

MULTILAYER STRUCTURE CREATION AND CRYSTAL SURFACE MODIFICATION BY LASER-PRODUCED PLASMAS

2. Implantation into silicon

RANGE PROFILE CALCULATIONS FOR THE HIGH ENERGY IMPLANTATION OF PHOSPHORUS INTO SILICON

DEFECT FLUX EFFECTS DURING ION IMPLANTATION

IMPURITY REDISTRIBUTION IN SILICON DUE TO ION BOMBARDMENT

6 MeV Ni HIGH DOSE IMPLANTATION INTO SILICON

ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION OF DOPED AMORPHOUS SILICON LAYERS

HIGH ENERGY IMPLANTATION AND ANNEALING OF PHOSPHORUS IN SILICON

DEPTH PROFILES OF RADIATION DAMAGE AFTER HIGH ENERGY SELF-IRRADIATION OF SILICON FROM OPTICAL REFLECTIVITY MEASUREMENTS ON BEVELLED SAMPLES

JONDTRON - PI HIGH INTENSITY ION PULSE PRODUCING HflCHINE FDR MATERIAL PROCESSING

A HOVEL ETCH STOP SYSTEM BASED ON HIGH DOSE NITROGEN IMPLANTATION FOR THIN CRYSTALLINE SILICON LAYER FORMATION

EFFECT OF HIGH ENERGY HYDROGEN BEAM INTENSITY ON DEFECT FORMATION IN SILICON

3. Implantation and annealing of compound semiconductor

RAPID THERMAL ANNEALING OF ION IMPLANTED GaAs BY MEANS OF A GRAPHITE STRIP HEATER

SILICON AND CHROMIUM DISTRIBUTION IN IMPLANTED AND SHORT TIME ANNEALED GaAs

INVESTIGATION OF LOW-TEMPERATURE RECRYSTALLIZATION OF ION IMPLANTED AMORPHOUS GaAs LAYERS

INVESTIGATION OF THE TEMPERATURE DEPENDENCE OF THE DECHANNELING III WEAKLY DAMAGED GaAs

Short time threshold for electrical activation of implanted and annealed GaAs

ELECTRICAL PROPERTIES OF RAPID THERMAL ANNEALED IMPLANTED GaAS

FORMATION OF AMORPHOUS GaP LAYERS BY ION IMPLANTATION AT LOW TEMPERATURE

RESIDUAL DEFECTS IN IMPLANTED GaAs AFTER RAPID THERMAL ANNEALING WITH INCOHERENT LIGHT

HALOGEN LAMP ANNEALING OF Au AND AuGe CONTACTS TO GaAs

4. Implantation into metals

FORMATION AND STRUCTURE OF IMPLANTATION-INDUCED AMORPHOUS ALLOYS

STRUCTURAL AND PHASE TRANSFORMATION IN PULSED ION IMPLANTATION OF BCC METALS

STRUCTURAL MODIFICATIONS OF NITROGEN IMPLANTED HIGH-SPEED STEEL

WEAR PROPERTIES OF HIGH-SPEED STEEL IMPLANTED WITH NITROGEN AT VARIOUS THERMAL CONDITIONS

TRIBOLOGICAL PROPERTIES OF ION IMPLANTED Fe-Cr STEELS

MICROSTRUCTURE OF TI-IMPLANTED FE

DOSE AND TEMPERATURE DEPENDENCE OE ARSENIC REDISTRIBUTION IN ION IMPLANTED NICKEL

INFLUENCE OF TEMPERATURE ON NITROGEN IMPLANTED IRON

CONVERSION ELECTRON MOSSBAUER SPECTROSCOPIC STUDIES OP IRON IMPLANTED WITH BORON, CARBON AND PHOSPHORUS

WEAR BEHAVIOUR OF ION IMPLANTED STEELS AND HARD METALS

HEAT PRODUCTION DURING ION IMPLANTATION INTO METALS AND ALLOYS

COMPOSITION DEPENDENCE OF MAGNETIZATION OF ION IMPLANTED COBALT LAYERS

AMORPHIZATION PROCESSES STUDIED BY HIGH DOSE ION IMPLANTATION INTO METALS

Implantation effects on microcrack initation in fatigued metals

STRUCTURAL MODIFICATIONS OP Hi EVAPORATED THIN FILMS IRRADIATED WITH P+ IONS

5. Transient heat treatment of semiconductors

ANNEALING OF LASER INDUCED DEFECTS IN SILICON

ORIGIN OP THE DEFECTS WITH DEEP LEVELS IN PULSED ANNEALED SILICON

ANNEALING OP SILICON BY INCOHERENT LIGHT PULSES OP 50 ms -10 s DURATIONS

CONTINUOUS ELECTRON BEAM ANNEALING OP ION-IMPLANTED SILICON

IN SITU ANNEALING OP ION-IMPLANTED SILICON IN A HIGH-VOLTAGE ELECTRON MICROSCOPE (HVEM)

Laser beam induced microdefects in silicon detected by SEM and TEM

RAPID THERMAL ANNEALING AND PROPERTIES OF B AND P IMPLANTED SILICON

THE EFFECT OF OXYGEN ON ELECTRICAL ACTIVATION AND DIFFUSION OF As IN Si BY RTA

INFLUENCE OF ELECTRON-BEAM AND HALOGEN LAMP ANNEALING ON THE ELECTRICAL PROPERTIES OF MOS STRUCTURES

ELECTRICAL ACTIVATION OF BORON IMPLANTED SILICON DURING THE EARLY STAGE OF RAPID THERMAL ANNEALING

NONEQUILIBRIUM IMPURITY SEGREGATION IN PHOSPHORUS IMPLANTED POLYCRYSTALIINE SILICON SUBJECTED TO TRANSIENT HEATING

TIME DEPENDENCE OP BORON DIFFUSIVITY DURING PULSE ANNEALING OP ION-IMPLANTED SILICON

COMPARATIVE ANALYSIS BY THE X-RAY DIFFRACTION METHOD 0? PULSE AND THERMAL ANNEALED ION-IMPLANTED SILICON

INTERNAL MECHANICAL STRESS AND ELECTRICAL ACTIVATION OF IMPURITY IN ION—IMPLANTED Si DURING PULSE ANNEALING

THE 13 MeV ELECTRON PULSE INDUCED MODIFICATION OF DYNAMIC PARAMETERS OF SILICON DIODES,THYRYSTORS AND TRANSISTORS

ACTIVATION OF SHALLOW As+ IMPLANTS IN (100) SILICON BY INCOHERENT LIGHT ANNEALING

ELECTRON BEAM HEAT SOURCE OF MODIFIED POWER DENSITY DISTRIBUTION

NANOSECOND POISE RECRISTALLIZATION Of HIGHLY DOSED SILICON LAYERS

THERMAL STRESSES IN SILICON WAFER DURING PULSED PLASH ANNEALING

MULTIPLE PULSE IMPLANTATION DOPED LAYERS IN SILICON

PULSE IMPLANTATION DOPING - APPLICATION FOR PHOTOVOLTAIC JUNCTION FORMATION

EFFECT OF OXYGEN RECOILS ON THE DEFECT ANNEALING IN Si DURING RTA

ANALYTICAL EVALUATION OF THE IMPURITY REDISTRIBUTION DURING POST-IMPLANTATION LASER ANNEALING

RAPID THERMAL ANNEALING : TEMPERATURE AND ACTIVATION UNIFORMITIES - COOLING SPEEDS AND MINIMUM DIFFUSION LENGTHS

6. Formation of silicides

THE INFLUENCE OF IMPLANTATION PARAMETERS AND ANNEALING CONDITIONS ON THE FORMATION AND PROPERTIES OF MoSi2 LAYERS

LIQUID PHASE GROWTH OF FeSi2

LIQUID PHASE GROWTH OF NiSi2 AND CoSi2

FORMATION OP EPITAXIAL NiSi2 LAYER BY HIGH DOSE ION IMPLANTATION AND RAPID THERMAL ANNEALING

REDISTRIBUTION OP IMPLANTED DOPANTS IN MoSi2/POLY-Si STRUCTURES DURING SILICIDATION TEMPERING

R.B.S. STUDIES OF WSi2 FORMATION FROM Si/W/Si LAYERS BY W + ION MIXING FOLLOWED BY ANNEALING WHEN THE W FILMS CONTAIN OXYGEN

ELECTRICAL RESISTIVITY OP SILICON IMPLANTED BY HIGH DOSE Cr+ IONS AFTER LASER ANNEALING

CRYSTALLINE AND AMORPHOUS Cr-Si ALLOY FORMATION WITH ENERGETIC PULSES

7. Ion beam assisted deposition and ion beam mixing

COMPUTER SIMULATION OP ION BEAM MIXING OF COBALT ON SILICON

I-V AND C-V STUDIES OF ION MIXED Au/GaAs (100) CONTACTS - EFFECT OF THE ANNEALING

ION MIXING IN GLASSES

ON THE FORMATION OF CARBON FILMS BY ION BEAM ASSISTED METHOD

ION MIXING IN Cu/Au MULTILAYERED THIN FILMS

A MODEL OP SIMULTANEOUS QR ALTERNATING ION IMPLANTATION IN FILMS AND COATINGS BEING DEPOSITED

INFLUENCE OF HIGH ENERGY PARTICLES ON THIN FILM FORMATION BY LPVD

MODIFICATION OF SURFACE PROPERTIES OF TOOL STEEL BY ION BEAM MIXING

Computer simulation and and experimental measurements of recoil implantation of gold into silicon

8.

Deposition, modification and structurization

ION BEAM MODIFICATION OF THIN POLYIMIDE FILMS

STUDY OF ELECTRICAL AND OPTICAL PROPERTIES OF FUSED QUARTZ IMPLANTED BY HIGH DOSE Cr+- AND Fe+-IONS

ION BOMBARDMENT INDUCED MODIFICATION OF La6

Pyrolitic laser deposition of tungsten

PULSED AND cw LASER SYNTHESIS OF III-VI AND IV-VI COMPOUND FILMS

MODIFICATION OP ELECTROCHROMIC W03 FILMS BY NANOSECOND LASER PULSES

HARDENING OF CEMENTED CARBIDES BY LASER PULSE IRRADIATION

TRANSIENT NUCLEATION IN LASER PLASMA DEPOSITION OF THIN FILMS

THEORETICAL MODEL OF LASER GENERATED PLASMA FOR THIN FILM DEPOSITION

EXPERIMENTAL SET-UP FOB LASER PULSE VAPOUR DEPOSITION IN UHV

CHARACTERIZATION OF THE LPVD-PROCESS BY MICHELSON INTERFEROMETRY

ON DEFECTS AND STRESSES IN THIN FILMS

ESR STUDY OF SiN FILMS PREPARED BY ECR PLASMA CVD METHOD

9. Silicon on insulator (SOI)

ELECTRICAL PROPERTIES OF SILICON FILMS ON Si02 FORMED BY EXPLOSIVE CRYSTALLIZATION

FORMATION OF BURIED SILICON NITRIDE AND OXYNITRIDE LAYERS IN SILICON BY ION BEAM SYNTHESIS

MODELING OF 18O TRACER STUDIES OF THE OXYGEN REDISTRIBUTION DURING FORMATION OF Si02 LAYERS BY HIGH DOSE IMPLANTATION

IMPROVED MODELING OF OXYGEN DEPTH PROFILES IN HIGH DOSE OXYGEN-IMPLANTED SILICON

THEORETICAL INVESTIGATION OF THERMALLY ACTIVATED AND ION BEAM INDUCED LATERAL SOLID-PHASE EPITAXY

MATHEMATICAL MODELLING OF THE CAPACITANCE CHARACTERISTICS AND THE THRESHOLD VOLTAGE OF A MOS STRUCTURE ON A THIN SILICON SUBSTRATE

INFLUENCE OF THERMAL GRADIENT ON THE RECRYSTALLIZATION OF THICK POLYCRYSTALLINE SILICON ON SIO2

ELECTRICAL CHARACTERIZATION OP THICK SOI-FILMS

A MODEL FOR NITROGEN REDISTRIBUTION PROCESSES IN HIGH DOSE NITROGEN-IMPLANTED SILICON

PHYSICAL MODEL, PROPERTIES AND OPTOELECTRONICAL APPLICATION OF HYDROGEN IMPLANTED SOI MOSFET'S

PULSE LASER INDUCED IGNITION OF EXPLOSIVE LIQUID-PHASE CRYSTALLIZATION OF AMORPHOUS SILICON

COMPUTER SIMULATION OF GRAIN BOUNDARY CONFINEMENT AT ZONE MELTING RECRYSTALLIZATION

STUDY OF STRUCTURE FORMATION BY THE MELT INSTABILITY OF SILICON AT LIGHT HEATING

High Throughput CO2 laser Recrystallization for 3D integrated Devices

FORMATION OP BURIED NITRIDE LAYERS BELOW NiSi2 BY ION IMPLANTATION

10. Diagnostics and ion microfocus beam

EMISSION CHARACTERISTICS OF EUTECTIC ALLOY LIQUID METAL ION SOURCES FOR FOCUSED ION BEAM SYSTEMS

CHARACTERISTICS OF AN ExB MASS SEPARATOR FOR FOCUSED ION BEAM SYSTEMS

CHANNELING EFFECTS AT LOW-ENERGY ION IMPLANTATION

POSSIBILITIES OF THE TDPAC METHOD FOR THE DIAGNOSIS OF RADIATION DAMAGE AND ANNEALING PROCESS IN IMPLANTED SEMICONDUCTORS

QUADRUPOLE-SIMS-MEASUREMENTS OP IMPURITIES IN SiO2/Si-STRUCTURES

HIGH TEMPERATURE ION SOURCE FOR IMPLANTATION PURPOSES

A HEW CONSTRUCTION OF ION IMPLANTER AT THE SLOVAK TECHNICAL UNIVERSITY

THERMAL PROCESSES UNDER INTERACTION OP FOCUSED ION BEAMS WITH SEMICONDUCTOR CRYSTALS

MASS AND ENERGY DISTRIBUTION MEASUREMENTS OF AuSi-LIQUID-METAL-ION SOURCE

CLUSTER IONS IN LASER MASS SPECTRA OF WO3/C TARGETS

ANALYSIS OF Ar ION BEAM ETCHING (IBE) INDUCED SURFACE DAMAGE OF GaAs BY MEANS OF 4+CU ADSORPTION / AUTORADIOGRAPHY AND RBS / CHANNELING

A MaV ION PROBE AT TU PRAGUE

11. Fundamentals

COMPUTER STUDIES OF THE STATISTICAL DISTRIBUTION FUNCTIONS OF PARTICLES MOVING IN COLLISION CASCADES

MONTE CARLO CALCULATIONS OF HIGH DOSE ION BOMBARDMENT ACCOUNTING FOR DYNAMIC TARGET MODIFICATION

ENERGY LOSS OF CHANNELED HELIUM IONS BY MONTE CARLO SIMULATION

TRANSMISSION SPUTTERING OF THIN GOLD FILMS: A COMPUTER SIMULATION STUDY

MODELLING OP NONEQUILIBRIUM PHASE TRANSITIONS INITIATED BY SHORT LASER PULSES IN SILICON

INTERMEDIATE CRYSTALLIZATION OP AMORPHOUS SILICON LAYERS AT NANOSECOND FUISED LASER ANNEALING

INVESTIGATIONS OB THE AMORPHOUS/CRYSTALLINE PHASE TRANSITION IN IONIMPLANTED SILICON BY MEANS OP CROSS-SECTIONAL TEM IMAGING

NUMERICAL MODELLING OF SILICON SAMPLE MELTING BY HIGH-INTENSITY ION-BEAM PULSE

SIMULATION OP NANOSECOND LASER ANNEALING OP SILICON ALLOWING FOR CRYSTALLIZATION OP SUPERCOOLED MELT

PHASE TRANSITIONS INDUCED BY NANOSECOND LASER HEATING OP AMORPHIZED SILICON

THEORETICAL TREATMENT OF THE IGNITION OF EXPLOSIVE LIQUID PHASE CRYSTALLIZATION PROCESSES

MODELLING OF THE FACETED GROWTH DURING LATERAL EXPLOSIVE CRYSTALLIZATION OF AMORPHOUS SILICON

LASER PULSE-INDUCED PHASE TRANSFORMATIONS VISUALIZED BY NANOSECOND-EXPOSURE ELECTRON MICROSCOPY

THERMAL PULSED ANNEALINS WITH ACCOUNT OF PLASMA EFFECT

AMORPHOUS SILICON MELTING TEMPERATURE VERSUS SELF-SUSTAINING CRYSTALLIZATION KINETICS

12. Miscellaneous

LONGITUDINAL-SPREAD CHARACTERISTICS OF RADIATION DEFECTS IN TELLURIUM-IMPLANTED GERMANIUM

ANODIC OXIDATION OF Si AS A LOW TEMPERATURE OXIDATION METHOD FOR PASSIVATION OF SEMICONDUCTOR DEVICES

SELF-ORGANIZATION PHENOMENA DURING CHARGE TRANSPORT IN BORON DOPED POLYORYSTALLINE SILICON

LUMINESCENCE OP CUBIC BORON NITRIDE IMPLANTED WITH HIGH ENERGY IONS

LUMINESCENCE OP DIAMOND IMPLANTED WITH HIGH ENERGY CARBON IONS

MODIFICATION OF SOLIDS DUE TO THE EXPOSURE TO HIGH TEMPERATURE PLASMAS

STRUCTURE AND PROPERTIES OF NANOMETER-SIZED SOLIDS

13. Author Index

Backmatter

Notes:

Includes bibliographical references.

Description based on: online resource; title from PDF information screen (de gruyter, viewed November 28, 2022).

Description based on publisher supplied metadata and other sources.

ISBN:

3-11-261120-9

OCLC:

1543208573