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Low-defect heteroepitaxy on porous Si substrates : cooperative research and development final report.

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Format:
Book
Government document
Contributor:
National Renewable Energy Laboratory (U.S.), issuing body.
United States. Department of Energy. Office of Scientific and Technical Information, Distributor.
Series:
CRADA report
NREL/TP ; 5 J 00-63409.
NREL/TP ; 5J00-63409
Language:
English
Subjects (All):
Solar cells--Design and construction.
Solar cells.
Solar cells--Materials.
Genre:
Online resources.
Physical Description:
1 online resource (1 page)
Place of Publication:
Golden, CO : National Renewable Energy Laboratory, December 2014.
Summary:
In this collaboration, NREL will grow Ge, SiGe, and III-V layers on porous Si (pSi) substrates prepared either by Crystal Solar or at NREL. The intent is to grow low-defect epitaxial III-V alloys using the porous Si layer to prevent defect formation. Finally, we aim to fabricate solar cells from the III-V layers to prove the electronic quality.
Notes:
Title from title screen (viewed November 1, 2016).
Published through SciTech Connect.
"December 2014."
"CRADA Number: CRD-13-534."
OCLC:
962171932

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