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Impact of accelerated stress-tests on SIC MOSFET precursor parameters / Joseph P. Kozak [and three others].

U.S. Government Documents Available online

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Format:
Book
Government document
Author/Creator:
Kozak, Joseph P., author.
Contributor:
National Renewable Energy Laboratory (U.S.), issuing body.
Series:
Conference paper (National Renewable Energy Laboratory (U.S.)) ; NREL/CP-5000-71331.
Conference paper ; NREL/CP-5000-71331
Language:
English
Subjects (All):
Metal oxide semiconductor field-effect transistors--Testing.
Metal oxide semiconductor field-effect transistors.
Silicon carbide.
Genre:
Online resources.
Physical Description:
1 online resource (5 pages) : color illustrations
Other Title:
Impact of accelerated stress tests on silicon carbide metal oxide semiconductor field effect transistors precursor parameters
Place of Publication:
[Golden, Colo.] : National Renewable Energy Laboratory, 2018.
Notes:
"Preprint."
"Presented at International Symposium on 3D Power Electronics Integration and Manufacturing (3D PEIM), College Park, Maryland, June 25 - 27, 2018."
"August 2018."
Includes bibliographical references (page 5).
Online resource; title from PDF title page (NREL, viewed October 10, 2018).
OCLC:
1056245130

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