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The role of the Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) in mobile technology platforms / by Gregory A. Mitchell.

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U.S. Government Documents Available online

U.S. Government Documents
Format:
Book
Government document
Author/Creator:
Mitchell, Gregory A., author.
Contributor:
U.S. Army Research Laboratory, issuing body.
Series:
ARL-TN ; 0459.
ARL-TN ; 0459
Language:
English
Subjects (All):
Bipolar transistors.
Silicon.
Germanium.
Digital communications.
silicon.
germanium.
Medical Subjects:
Silicon.
Germanium.
Genre:
Online resources.
Physical Description:
1 online resource (vi, 30 pages) : illustrations.
Place of Publication:
Adelphi, MD : Army Research Laboratory, September 2011.
Notes:
Includes bibliographical references (page 27).
Description based on online resource, PDF version; title from title page (ARL, viewed July 13, 2017).
Other Format:
Print version: Mitchell, Gregory A. Role of the Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) in mobile technology platforms
OCLC:
993626833
Access Restriction:
Approved for public release; distribution unlimited.

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